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Feasibility Study of Preparation of ZnO Thin Film by Chemical Vapor Deposition System
http://hdl.handle.net/10458/6820
http://hdl.handle.net/10458/682048985bee-dcda-429d-8a3d-478c90f65839
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (2.7 MB)
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| Item type | 会議発表論文 / Conference Paper(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Feasibility Study of Preparation of ZnO Thin Film by Chemical Vapor Deposition System | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Zinc Oxide, Plasma CVD, Thin film | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| 著者 |
Thaweesak, Tanaram
× Thaweesak, Tanaram× Nuttee, Thungsuk× Harittapak, Apirat× Narong, Mungkung× Yuji, Toshifumi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | This research paper aims to present the Feasibility Study of Preparation of ZnO Thin Film by Chemical Vapor Deposition System on silicon wafer, B-doped p-type Si (100) wafer, with powder deposition. The plasma system for this experimental used mixture of argon (Ar) and oxygen (O2). The ZnO thin film was performed by heating the ZnO powder. The Ar and O2 gas have been heating in pipe with silicone belt heater and micro gas heater. The temperature was controlled by temperature control (PID). The results on silicon wafer was studies for find the optimization point to preparation of ZnO thin film on surface was in typical pyramid shape structure with crystal grain size. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : International Conference on Science, Technology & Education (ICSTE 2016) p. 93-96, 発行日 2016-09 |
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| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
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Thaweesak, Tanaram, Nuttee, Thungsuk, Harittapak, Apirat, Narong, Mungkung, Yuji, Toshifumi, 2016, Feasibility Study of Preparation of ZnO Thin Film by Chemical Vapor Deposition System: 93–96 p.
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