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非発光再結合検出による歪緩和層挿入超格子構造太陽電池のキャリア輸送評価
http://hdl.handle.net/10458/6700
http://hdl.handle.net/10458/670064d3ab7a-1b0d-4c76-a6ac-c75592a3424d
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (1.3 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | 非発光再結合検出による歪緩和層挿入超格子構造太陽電池のキャリア輸送評価 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Investigation of Carrier Transport in the Strain-balanced-superlattice Solar Cells from the Non-radiative point of view | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Quantum-well solar cells, Miniband formation, Carrier transport property, Superlattice | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | ヒ ハッコウ サイ ケツゴウ ケンシュツ ニ ヨ ル イビツ カンワ ソウ ソウニュウ チョウ コウシ コウゾウ タイヨウ デンチ ノ キャリア ユソウ ヒョウカ | |||||
| 言語 | ja-Kana | |||||
| 著者 |
岩永, 凌平
× 岩永, 凌平× 中村, 翼× 渡部, 愛理× 安藝, 翼× 杉山, 正和× 碇, 哲雄× 福山, 敦彦× 岩永, 凌平× 渡部, 愛理× 安藝, 翼× 杉山, 正和 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated the carrier transport properties in superlattice (SL) embedded p-i-n GaAs solar cells by using Piezoelectric Photo-Thermal (PPT) spectroscopy that detected the non-radiative recombination of photo-excited carriers. Two samples with different SL were prepared. One was InGaAs/GaAsP SL and other was GaAs-interlayer inserted SL to relax the strain caused by the lattice mismatch. From the comparison with the theoretical calculation, we concluded that observed distinctive peaks below the band gap of GaAs substrate were due to the optical transition from the first quantum level of heavy hole to the first quantum level of electron (e1-hh1). The temperature dependence of their PPT signal intensities was well explained by the carrier relaxation models consisting of four processes: radiative and non-radiative recombination in SL, thermal escape to the barrier layer (ES process), and tunneling through miniband after thermal excitation from the lower to the upper levels (TATE process). The activation energy ΔETATE for the interlayer sample was 0.144 eV, this was smaller than the activation energy ΔEES of 0.259 eV for the barrier-2.0-nm sample. Moreover, the TATE process was also found to be dominant in all processes at 300 K from the calculation of the relevant lifetimes. As a result, the insertion of an interlayer resulted in the SL embedded solar cells with a higher efficiency than conventional multiple quantum well embedded solar cells. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 48, p. 45-49, 発行日 2019-07 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
