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GaAsN 薄膜の原子層エピタキシー成長におけるドーパンドSi 供給順序が電気特性に与える影響
http://hdl.handle.net/10458/5883
http://hdl.handle.net/10458/5883b1ae5b52-8d2a-4bb1-b094-8b1a7ef7020c
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (701.4 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | GaAsN 薄膜の原子層エピタキシー成長におけるドーパンドSi 供給順序が電気特性に与える影響 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Effects of Si Dopant Gas Flow Sequence on Electrical Properties of GaAsN Films Grown by ALE | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | ALE, Si-doped GaAsN, Sequence, Hall, Electrical Properties | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
堀切, 将
× 堀切, 将× 横山, 祐貴× 鈴木, 秀俊× 碇, 哲雄× 福山, 敦彦× Horikiri, Masaru× 横山, 祐貴 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The effects of Si dopant gas flow sequence on electrical properties of GaAsN films have been investigated. The Si-doped and non-doped GaAsN films were grown on semi-insulating GaAs(001) substrate at substrate temperatures of 480, 500 and 520 oC by atomic layer epitaxy (ALE). The non-doped GaAsN films grown by ALE were p-type due to residual carbon atoms worked as acceptor. The Si doped films were also p-type, however carrier density and mobility were smaller than those of the non-doped films. The difference on carrier density between non-doped and Si-doped films was consistent with Si concenteration in the films. Decrease of carrier mobility could be explained by increasing ionized scattering caused by Si. These suggested that Si atoms worked as donor. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 45, p. 115-118, 発行日 2016-07-31 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
