WEKO3
-
RootNode
アイテム
There is a newer version of this record available.
Piezoelectric photothermal study of Al_x Ga_(1−x) As epitaxial layer (x=0.22, 0.28, and 0.5) grown on semi-insulating GaAs substrate
http://hdl.handle.net/10458/5441
http://hdl.handle.net/10458/544189382653-9139-4128-b86c-93ce935b2e50
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (97.7 kB)
|
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Piezoelectric photothermal study of Al_x Ga_(1−x) As epitaxial layer (x=0.22, 0.28, and 0.5) grown on semi-insulating GaAs substrate | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| キーワード | III-V semiconductors, Epitaxy, Aluminium, Piezoelectric fields, Photothermal effects | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
福山, 敦彦
× 福山, 敦彦× 境, 健太郎× 明石, 義人× 碇, 哲雄× Fukuhara, Hironori× Tanaka, Shin-ichi× Memon, Aftab A. |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Piezoelectric photothermal measurements of an Al_x Ga_<1−x> As （x=0.22, 0.28, and 0.5） epitaxial layer grown on a GaAs substrate were carried out in the temperature range of 297 to 80 K. In addition to the band gap signal of the GaAs substrate, the direct transition gaps of AlGaAs were clearly observed in the higher photon energy region. It was experimentally confirmed that the temperature coefficient of the direct transition gap of Al_x Ga_<1−x> As alloy decreases with increasing Al mole fraction. By conducting the quenching light illumination measurements at 80 K we concluded that the photoexcited electrons in the AlGaAs epitaxial layer drifted under the influence of an electric field present at the AlGaAs/GaAs interface. The drifted electrons eventually recombined with the ionized EL2 centers in the SI GaAs substrate. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The following article appeared in Journal of Applied Physics. 11/1/2001, Vol. 90 Issue 9, p4385. and may be found at http://dx.doi.org/10.1063/1.1407309 | |||||
| 書誌情報 |
Journal of Applied Physics 巻 90, 号 9, p. 4385-4391, 発行日 2001-11-01 |
|||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00218979 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
Share
Cite as
Fukuyama, Atsuhiko, Sakai, Kentaro, Akashi, Yoshito, Ikari, Tetsuo, Fukuhara, Hironori, Tanaka, Shin-ichi, Memon, Aftab A., 2001, Piezoelectric photothermal study of Al_x Ga_(1−x) As epitaxial layer (x=0.22, 0.28, and 0.5) grown on semi-insulating GaAs substrate: American Institute of Physics, 4385–4391 p.
Loading...
