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Proton-beam-induced defect levels in thin-film absorbers: An investigation on nonradiative electron transitions
http://hdl.handle.net/10458/5353
http://hdl.handle.net/10458/5353e54a6320-377b-4db5-9c84-c8cd45da837f
| 名前 / ファイル | ライセンス | アクション |
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本文 (60.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||
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| 公開日 | 2020-06-21 | |||||||||||||||||
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| タイトル | Proton-beam-induced defect levels in thin-film absorbers: An investigation on nonradiative electron transitions | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| キーワード | ||||||||||||||||||
| 言語 | en | |||||||||||||||||
| キーワード | Protons, Excitons, Absorption spectra, Solar cells, Defect levels | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||
| 著者 |
赤木, 洋二
× 赤木, 洋二× 吉野, 賢二
WEKO
12061
× 碇, 哲雄
WEKO
7290
× 川北, 史朗× 今泉, 充× 仁木, 栄× 櫻井, 啓一郎× 石塚, 尚吾× 大島, 武× 川北, 史朗× 今泉, 充× 仁木, 栄× 櫻井, 啓一郎× 石塚, 尚吾× 大島, 武 |
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| 内容記述タイプ | Abstract | |||||||||||||||||
| 内容記述 | Electron nonradiative relaxation through the proton-irradiation-induced defects in solar cell material were investigated by using a piezoelectric photothermal spectroscopy （PPTS）. Among the observed three peaks at 1.01, 0.93, and 0.84eV, it was concluded that the peak at 0.84eV was due to the proton-irradiation-induced defect. This is because this peak appeared after irradiation with the proton energy of 0.38MeV and the fluence of 1×10^<14>cm^<−2>. The peaks at 1.01 and 0.93eV were attributed to free band-edge exciton and intrinsic defect level, respectively. The intensities for the latter two peaks were not affected by the irradiation. Since the irradiation defect was clearly observed at room temperature, we concluded that the PPTS technique was a very sensitive tool to study the defect level in the irradiated semiconductor thin-film solar cell structures. | |||||||||||||||||
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| 内容記述タイプ | Other | |||||||||||||||||
| 内容記述 | The following article appeared in Applied Physics Letters. 8/23/2004, Vol. 85 Issue 8, p1347-1349 and may be found at http://dx.doi.org/10.1063/1.1784518 | |||||||||||||||||
| 書誌情報 |
Applied Physics Letters 巻 85, 号 8, p. 1347-1349, 発行日 2004-08-23 |
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| 出版者 | ||||||||||||||||||
| 出版者 | American Institute of Physics | |||||||||||||||||
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| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 00036951 | |||||||||||||||||
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| 権利情報 | Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||||||||||||||
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| 出版タイプ | VoR | |||||||||||||||||
