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Optical characterizations of CuInSe _2 epitaxial layers grown by molecular beam epitaxy
http://hdl.handle.net/10458/5276
http://hdl.handle.net/10458/5276dceef7fd-d542-4e58-8cd6-5afc4e181fd6
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ikr_5276.pdf (558.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Optical characterizations of CuInSe _2 epitaxial layers grown by molecular beam epitaxy | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| キーワード | Band gap, Cancer, Copper, Epitaxy, III-V semiconductors | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
吉野, 賢二
× 吉野, 賢二× 横山, 宏有× 前田, 幸治× 碇, 哲雄× 福山, 敦彦× 山田, 昭政× 仁木, 栄× Fons, Paul. J.× Yamada, Akimasa× Niki, Shigeru |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | CuInSe_2 （CIS） films with Cu/In ratios of γ=0.82–1.79 have been grown on a GaAs （001） substrate by molecular beam epitaxy.Piezoelectric photoacoustic （PPA） measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence （PL） measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gapenergies of the CIS（AB and C bands） and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy （V_<Cu> ） and interstitial In （In_i） were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gapenergy in the CIS/GaAs thin films. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The following article appeared in Journal of Applied Physics. 10/15/1999, Vol. 86 Issue 8, p4354 and may be found at http://dx.doi.org/10.1063/1.371369 | |||||
| 書誌情報 |
Journal of Applied Physics 巻 86, 号 8, p. 4354-4359, 発行日 1999-10-15 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00218979 | |||||
| 権利 | ||||||
| 権利情報 | Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
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Cite as
Yoshino, Kenji, Yokoyama, Hirosumi, 前田, 幸治, Ikari, Tetsuo, Fukuyama, Atsuhiko, 山田, 昭政, 仁木, 栄, Fons, Paul. J., Yamada, Akimasa, Niki, Shigeru, 1999, Optical characterizations of CuInSe _2 epitaxial layers grown by molecular beam epitaxy: American Institute of Physics, 4354–4359 p.
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