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Structural and electrical characterization of AgInSe_2 crystals grown by hot-press method
http://hdl.handle.net/10458/5091
http://hdl.handle.net/10458/50916096f4f0-04e1-4d08-8e30-8fa3527d6ae2
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ikr_5091.pdf (788.4 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-06-21 | |||||
| タイトル | ||||||
| タイトル | Structural and electrical characterization of AgInSe_2 crystals grown by hot-press method | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
吉野, 賢二
× 吉野, 賢二× 木下, 綾× 白幡, 泰浩× 小嶋, 稔× 野本, 恵太× 吉武, 剛× 碇, 哲雄× Kinoshita, Aya× Shirahata, Yasuhiro× Oshima, Minoru× Nomoto, Keita× Yoshitake, Tsuyoshi× Ozaki, Shunji |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Undoped polycrystalline AgInSe_2 crystals were successfully grown at low temperature （650℃） using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 10^（16） cm^（-3） and a mobility of 70 cm^2V^（-1）s^（-1） obtained by Hall measurement at RT. | |||||
| 書誌情報 |
Journal of Physics: Conference Series 巻 100, 号 4, 発行日 2008 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 17426588 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
