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カルコパイライト型半導体CuInS2およびCuInSe2薄膜の作成と評価
http://hdl.handle.net/10458/946
http://hdl.handle.net/10458/9464e37632a-9993-4b44-8a5d-7185a5806bd8
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
dt_akagi.pdf (4.6 MB)
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| Item type | 学位論文 / Thesis or Dissertation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-11-21 | |||||
| タイトル | ||||||
| タイトル | Preparation and characterization of chalcopyrite semiconductor CuInS2 and CuInSe2 thin films | |||||
| 言語 | en | |||||
| タイトル | ||||||
| タイトル | カルコパイライト型半導体CuInS2およびCuInSe2薄膜の作成と評価 | |||||
| 言語 | ja | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_46ec | |||||
| 資源タイプ | thesis | |||||
| 著者 |
赤木, 洋二
× 赤木, 洋二 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Preperation and Characterization of chalcopyrite semiconductor Cu-In-VI2 thin film were studied from the two different viewpoints. First, electron nonradiative relaxation through the proton-irradiation-induced defects in CuInSe2(CISe)solar cell material were investigated by using a piezoelectric photothermal spectroscopy (PPTS). New insight for developing further the conversion efficiency was obtained for the most known compound among the chalcopyrite materials form the point of view of nonradiative transition. Second, structural, electrical and optical properties of non-doped and Sb-doped CuInS2(CIS) thin films grown by single souce thermal evaporation method using CIS powder grown by hot-press method due to the preparation at low cost. By using this compound, I can conclude that a new candidate for more efficient and lower cost solar cell is expected. Proton irradiation damage for CISw solar cell materials was investigated by the PPTS technique. Three major peaks below the band-gap energy of CISe, 1.01, 0.93 and 0.84 eV, were ovserved by PPTS measured at room temperature. The 1.01 eV peak was due to the free exciton attributed to the so-called CISe AB-band. No effect of the proton irradiation for the free-exciton peak was observed. The peak at 0.93 eV observed from both before and after irradiation samples might be due to the intrinsic defect, Cu vacancies. Therfore, the most prominent peak at 0.84 eV was found to be due to the proton irradiation damages. THe candidate for the irradiation-induced defect might be the noner-type complex defects(V Cu-Se) that were formed by Cu(V Ca) and Se vacancy (V Se). The evident changes in the measured spectra have suggested thet the PPTS technique is a powerful methodology to study the defect levels in the irradiated semiconductor thin films. The characterization of the evaporated CIS films that were annealed from 100 to 500℃ in air after the evaporation was investigated. Polycrystalline CIS thin films were grown by annealing avobe 200℃for 30 min. By Sb-doping, polycrystalline CIS thin films annealed at 500℃ could be stably frown in comparison with non-doped ones. The frain size of non-doped CIS srystals became large with increasing the annealing temperatures, and the maximum grain size of the samples after annealing at 400℃ was over 500 nm. The Sb-doped films became closer to stoichiometry in comparison with the non-doped films. The Eg of the films doped with Sb atoms at 5.7 mol.% annealed avobe 200℃ and the films doped with Sb atoms annealed at 500℃ was almost constant at 1.46-1.48 eV. It was deduced that these films had the good quality films. |
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| 言語 | en | |||||
| 内容記述 | ||||||
| 宮崎大学大学院工学研究科博士論文 | ||||||
| 内容記述 | ||||||
| ja | ||||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
