WEKO3
アイテム
フェムト秒レーザーを用いた半導体関連材料の加工と特性の評価
http://hdl.handle.net/10458/307
http://hdl.handle.net/10458/307017dca59-f1ec-480a-a84c-0b3a366b2a53
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00002428228.pdf (1.0 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||||
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| 公開日 | 2007-06-28 | |||||||||||
| タイトル | ||||||||||||
| タイトル | フェムト秒レーザーを用いた半導体関連材料の加工と特性の評価 | |||||||||||
| 言語 | ja | |||||||||||
| タイトル | ||||||||||||
| タイトル | Photo-Machining of Semiconductor Related Materials with Femtosecond Laser Ablation and Characterization of Its Properties | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | jpn | |||||||||||
| キーワード | ||||||||||||
| 言語 | en | |||||||||||
| 主題Scheme | Other | |||||||||||
| 主題 | Femtosecond laser, Thin semiconductor substrate, Thermal effect, Drilled hole, High speed imaging technique, ICCD camera | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | departmental bulletin paper | |||||||||||
| その他（別言語等）のタイトル | ||||||||||||
| その他のタイトル | フェムトビョウ レーザー オ モチイタ ハンドウタイ カンレン ザイリョウ ノ カコウ ト トクセイ ノ ヒョウカ | |||||||||||
| 著者 |
水野, 俊男
× 水野, 俊男× 向本, 徹× 横谷, 篤至
WEKO
12038
× 川原, 公介× 二宮, 孝文× 沢田, 博司× 黒澤, 宏× Mizuno, Toshio× Mukumoto, Toru× Kawahara, Kosuke× Ninomiya, Takahumi× Sawada, Hiroshi× Kurosawa, Kou |
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Silicon is the most basic material in the semiconductor industry, because it is used as a substrate of the integrated circuits (ICs). The silicon substrates are planed to reduce the thickness as thin as 50 μm for the ICs of the next generation. Since mechanical strength ofsuch a thin substrate is extremely weak, it is very difficult to cut by the convectional mechanical dicing technique. Therefore new techniques using lasers in which non-contact process is expected have been tried to develop by many researchers. Especially, it is said that a femtosecond laser can do processing with a little thermal effect compared with the case using the nanosecond laser. However, it has not been completed to eliminate the thennal effects, even if use with femtosecond laser. Then to find out the reason, we have tried to observe the process that the drilled hole is formed with a high speed imaging technique using ICCD camera. A regenerative amplified Ti:sapphire laser (E = 30 ~ 500 μJ/pulse, r= 200 fs,λ= 780 nm, f= 10 Hz) was used and focused onto a 50 μm-thick silicon sample. The gate ofthe ICCD camera was set at 5 ns. First, we investigated the dependence of laser energy on the speed of the fonnation of the drilled hole. As a result, it was found that the larger the energy, the slower the speed of the formation. Even if the smaller energy density was used, very slow speed of formation and much larger thermal effects are observed when the defocused condition was used. So we can say that the degree of the thennal effects is not simply related to the energy density of the laser but strongly related to the speed of the formation, which can be measured by the ICCD camera. The similar tendency was also obtained for other materials, which are important for the fabrication of ICs (Al, Cu, SiO2 and acrylic resin). |
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| 言語 | en | |||||||||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 33, p. 93-99, 発行日 2004-10 |
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| 出版者 | ||||||||||||
| 出版者 | 宮崎大学工学部 | |||||||||||
| 言語 | ja | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||||||||
| 言語 | en | |||||||||||
| ISSN | ||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||
| 収録物識別子 | 05404924 | |||||||||||
| 書誌レコードID | ||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||
| 収録物識別子 | AA00732558 | |||||||||||
| 著者版フラグ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
