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InAs and GaAs quantum dots grown by hyperthermal source beams
http://hdl.handle.net/10458/306
http://hdl.handle.net/10458/3065fbef85b-27ef-4943-b265-9928dbe715ce
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00002428227.pdf (498.9 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-06-28 | |||||
| タイトル | ||||||
| タイトル | InAs and GaAs quantum dots grown by hyperthermal source beams | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Growth method, Chemical beam epitaxy, Semiconducting III-V materials | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| その他（別言語等）のタイトル | ||||||
| その他のタイトル | InAs and GaAs quantum dots grown by hyperthermal source beams | |||||
| 著者 |
Ozeki, Masashi
× Ozeki, Masashi× Shimizu, Yuichiro |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Abstract A growth method which uses group III (triisopropylindium and triisobutylgallium) and V (trisdimethylarsenic) metalorganic molecules with hyperthermal energies has been developed for the growth of GaAs and InAs quantum dots. It grows uniform quantum dots with an extremely high density of 1 x10(14乗) cm(-2乗), which cannot be attained using Stranski-Krastanov (S-K) growih mode. GaAs and InAs quantum dots grown by this technique show a sharp and strong emission peak in the photoluminescence spectra, suggesting that the dots are very uniform in size and have good quality. It is demonstrated that the growth mechanism is quite different from that of the S-K growth mode. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 33, p. 87-92, 発行日 2004-10 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
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Cite as
Ozeki, Masashi, Shimizu, Yuichiro, 2004, InAs and GaAs quantum dots grown by hyperthermal source beams: 宮崎大学工学部, 87–92 p.
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