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PR及びPL法によるシリコン基板上に成長させた窒化ガリウムの光学的特性に対する歪の影響
http://hdl.handle.net/10458/4696
http://hdl.handle.net/10458/469673da63a7-69ef-4aa8-a59d-8295594462ff
名前 / ファイル | ライセンス | アクション |
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engineering23-26.pdf (640.6 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2013-12-24 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | PR及びPL法によるシリコン基板上に成長させた窒化ガリウムの光学的特性に対する歪の影響 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | The Effect of Strain on the Optical Properties of GaN Grown on Si Investigated by Photoreflectance and Photoluminescence | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | (1-101)GaN, 8°off-oriented (001)Si substrate, Photoreflectance, Photoluminescence | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | PR オヨビ PLホウ ニヨル シリコン キバンジョウ ニ セイチョウ サセタ チッカ ガリウム ノ カガクテキ トクセイ ニ タイスル ユガミ ノ エイキョウ | |||||
著者 |
元田, 雄大郎
× 元田, 雄大郎× 鈴木, 章生× 大堀, 大介× 福山, 敦彦× 本田, 善央× 山口, 雅史× 天野, 浩× 碇, 哲雄× Motoda, Yutaro× Suzuki, Akio× Ohori, Daisuke× Honda, Yoshio× Yamaguchi, Masahito× Amano, Hiroshi |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Non-doped (1-101)GaN and C-doped (1-101)GaN thin film samples were grown by a selective metal-organic-vapor-phase-epitaxy (MOVPE) method on 8˚off-oriented (001) Si substrate. In This study, we identify the E_g of the GaN thin films on Si substrate by photoreflectance (PR) and photoluminescence (PL) methods. From the fitting analysis to the obtained PR spectrum, the estimated values of critical energy (E_cr) of GaN film grown on Si substrate were approximately 1 meV lower than expected values for strain-free GaN bulk sumple. Exciton peak positions of non-doped and C-doped (1-101)GaN grown on Si substrate corresponded exactly to strain-free GaN bulk sample. These experimental results implied that the strain caused by the lattice mismuch between GaN and Si were relaxed in the GaN surface resion. | |||||
言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 42, p. 23-26, 発行日 2013-08-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |