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アニール効果による酸化亜鉛薄膜の低抵抗化
http://hdl.handle.net/10458/4981
http://hdl.handle.net/10458/4981b3faa3f8-90c2-4cda-825c-6c266017e1c9
名前 / ファイル | ライセンス | アクション |
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engineering43_85-91.pdf (1.6 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2014-09-04 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | アニール効果による酸化亜鉛薄膜の低抵抗化 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Annealing Effects on Impurities-Doped ZnO Films by Spray Method | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | ZnO, TCO, diethyl zinc(DEZ) | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
その他(別言語等)のタイトル | ||||||
その他のタイトル | アニール コウカ ニヨル サンカ アエン ハクマク ノ テイ テイコウカ | |||||
著者 |
井手, 亜貴子
× 井手, 亜貴子× 吉野, 賢二× Ide, Akiko |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Ga-doped ZnO thin films were grown on glass substrate by a conventional spray method at 150℃ using Diethyl zinc based solution. The Ga-doped ZnO thin films had a low sheet resistivity of 15.0Ω/sq. , a carrier concentration of 2.0×10^<20> cm^<-3> and mobility of 20.0 cm^2 (Vs)^<-1> at optimal Ga content of 2 at% upon hydrogen annealing at 450℃. It was assumed that an increase of the n-type carrier concentration is due to increase oxygen vacancies by reacting hydrogen and oxygen in ZnO from X-ray photoelectron spectroscopy results. | |||||
言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 43, p. 85-91, 発行日 2014-07-31 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 宮崎大学工学部 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |