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Offset-Free Wide-Input-Range Flipped Voltage Followers Using Depletion MOSFETs and FG-MOSFETs
http://hdl.handle.net/10458/4090
http://hdl.handle.net/10458/4090016e522b-50de-4e54-b311-18e77c882ec9
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
engineering41_29-34.pdf (759.8 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||||||||||
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| 公開日 | 2012-10-25 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | Offset-Free Wide-Input-Range Flipped Voltage Followers Using Depletion MOSFETs and FG-MOSFETs | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| キーワード | ||||||||||||||||||
| 言語 | en | |||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | Voltage Follower, Flipped Voltage Follower, Wide Input Range, Offset Voltage, Analog Circuits | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | departmental bulletin paper | |||||||||||||||||
| 著者 |
Abidin, Zainul
× Abidin, Zainul× 淡野, 公一
WEKO
7152
× 田村, 宏樹
WEKO
7150
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| 抄録 | ||||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||||
| 内容記述 | In this paper, offset-free and wide-input-range voltage followers are presented. The conventional voltage follower has two disadvantages; narrow input range and offset voltage. In this paper, these problems are solved. The former problem is modified by adding two MOSFETs in the diode-connecting path. The latter problem is modified by using depletion MOSFETs or floating-gate MOSFETs (FG-MOSFETs). Using these devices, the threshold voltage can be eliminated. The circuits are simulated in a 0.25 μm CMOS process. Simulation results demonstrate that input range of the proposed circuit is 48.9% wider than the conventional one. Depletion MOSFETs and FG-MOSFETs are used in the proposed circuit to decrease the offset voltage drastically. The depletion MOSFETs and FG-MOSFETs decrease the offset voltage drastically. The input ranges of the depletion MOSFETs scheme and FG-MOSFETs scheme are enlarged 54.5% and 140.6% respectively from the conventional one. In the FG-MOSFETs implementation, the output voltage is almost similar with the theoretical one and the gain is ≈ 0.5. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 41, p. 29-34, 発行日 2012-07-30 |
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| 出版者 | ||||||||||||||||||
| 出版者 | 宮崎大学工学部 | |||||||||||||||||
| 言語 | ja | |||||||||||||||||
| 出版者 | ||||||||||||||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| ISSN | ||||||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||||||
| 収録物識別子 | 05404924 | |||||||||||||||||
| 書誌レコードID | ||||||||||||||||||
| 収録物識別子タイプ | NCID | |||||||||||||||||
| 収録物識別子 | AA00732558 | |||||||||||||||||
| 著者版フラグ | ||||||||||||||||||
| 出版タイプ | VoR | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||||||||
