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  1. 工学部
  1. 工学部
  2. 紀要掲載論文 (工学部)
  1. 工学部
  2. 紀要掲載論文 (工学部)
  3. 宮崎大學工學部紀要
  1. 工学部
  2. 紀要掲載論文 (工学部)
  3. 宮崎大學工學部紀要
  4. 40号

Atomic scale observation of the initial stage of thin film formation by PLD method

http://hdl.handle.net/10458/3587
http://hdl.handle.net/10458/3587
ef1f6fc5-5e3c-43dd-acc7-bb076a0a824f
名前 / ファイル ライセンス アクション
6engineering40_pp.29-33.pdf 6engineering40_pp.29-33.pdf (718.2 kB)
アイテムタイプ 紀要論文 / Departmental Bulletin Paper(1)
公開日 2012-03-08
タイトル
タイトル Atomic scale observation of the initial stage of thin film formation by PLD method
言語 en
言語
言語 eng
キーワード
言語 en
主題Scheme Other
主題 PLD, STM, Initial stage, Si(111), HOPG, C60, Mn
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ departmental bulletin paper
著者 カイリル, ヌルフスナ

× カイリル, ヌルフスナ

WEKO 14382

ja カイリル, ヌルフスナ

ja-Kana カイリル, ヌルフスナ

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横谷, 篤至

× 横谷, 篤至

WEKO 12038
e-Rad_Researcher 00183989

ja 横谷, 篤至
宮崎大学

ja-Kana ヨコタニ, アツシ

en Yokotani, Atsushi
University of Miyazaki

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宇野, 貴大

× 宇野, 貴大

WEKO 14384

ja 宇野, 貴大


ja-Kana ウノ, タカヒロ

en Uno, Takahiro

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Khairir, Nurulhusna

× Khairir, Nurulhusna

WEKO 14385

en Khairir, Nurulhusna

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宇野, 貴大

× 宇野, 貴大

WEKO 14384

ja 宇野, 貴大


ja-Kana ウノ, タカヒロ

en Uno, Takahiro

Search repository
抄録
内容記述タイプ Abstract
内容記述 We have observed the initial stage of film formation process by pulsed laser deposition (PLD) method on the Si(111)7×7 surface to obtain the information of the interface between the substrate and the films. In the present work, we have concentrated to observe the initial stage for SiC and MnSi thin films fabricated by the PLD method.
We used an ultra-high-vacuum scanning tunneling microscope (UHV-STM) for the observation. HOPG, C60 and Mn targets were used for the PLD experiment. While the substrated used in the experiment is Si(111)7×7. The number of shots varied from 1-10 shots.
From the results of the experiment, we determined the characteristic of adsorption site as well as morphological characteristic for particles in each target material. We suggested that particles ablated from HOPG and Mn target materials which have dangling bonds preferred to adsorb onto adatoms of Si(111)7×7 which have dangling bonds as well, whereas particles ablated from C60 target material preferred to adsorb onto the mechanical structure of the Si(111)7×7 surface because of the neutrality of electricity of the particle. We also suggested that HOPG and Mn target particles preferred to adsorb more on faulted half unit cell rather than unfaulted half unit cell due to the small energy difference between the particles and the faulted half unit cell. While due to the charge neutrality, the difference between the faulted half unit cell and the unfaulted half unit cell was small for the C60 target particles. Also, we suggested that HOPG and Mn target particles preferred to cluster while C60 particles preferred to spread onto the surface.
These results are expected to be useful information for clarification of mechanism of the deposition process of PLD method.
言語 en
書誌情報 ja : 宮崎大学工学部紀要
en : Memoirs of Faculty of Engineering, University of Miyazaki

巻 40, p. 29-33, 発行日 2011-07-30
出版者
出版者 宮崎大学工学部
言語 ja
出版者
出版者 Faculty of Engineering, University of Miyazaki
言語 en
ISSN
収録物識別子タイプ ISSN
収録物識別子 05404924
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA00732558
著者版フラグ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
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