WEKO3
-
RootNode
アイテム
There is a newer version of this record available.
New Circuit of Back-Gate Driven Flipped Voltage Follower
http://hdl.handle.net/10458/4101
http://hdl.handle.net/10458/4101c0caba13-6f4f-4ca8-9653-2636d3862983
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
engineering41_93-98.pdf (877.1 kB)
|
|
| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2012-10-26 | |||||
| タイトル | ||||||
| タイトル | New Circuit of Back-Gate Driven Flipped Voltage Follower | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Voltage follower, Flipped voltage follower, Wide input range, Analog circuits, Backgate driven MOSFET | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
Setiabudi, Agung
× Setiabudi, Agung× Tanno, Koichi× Tamura, Hiroki× Toyama, Takako |
|||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In this paper, a new circuit of back-gate driven flipped voltage followers are presented. The conventional voltage follower has two disadvantages; narrow input range and offset voltage. The former problem is solved by adding two MOSFETs in the diode-connecting path and the latter problem is solved by using depletion MOSFETs. Nevertheless, in this case there is no ordinary fabrication process for depletion MOSFETs. Therefore, this new voltage follower is difficult to be realized. In this paper, this new problem is solved by replacing depletion MOSFETs with back-gate driven MOSFETs. To support the back-gate MOSFETs, an additional circuit called constant V_GS circuit is inserted in circuit. In this proposed circuit, the number of transistors in constant V_GS circuit could be decreased. The circuits are simulated in a 0.25 μm CMOS process using HSPICE. Simulation results demonstrate that input range of the proposed circuit is 0.92V, the -3dB bandwidth is 3.07 MHz, the power consumption is 300.9 μW and the THD at 100 kHz is 0.39%. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 41, p. 93-98, 発行日 2012-07-30 |
|||||
| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
Share
Cite as
Setiabudi, Agung, Tanno, Koichi, Tamura, Hiroki, Toyama, Takako, 2012, New Circuit of Back-Gate Driven Flipped Voltage Follower: 宮崎大学工学部, 93–98 p.
Loading...
