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  1. テニュアトラック推進機構
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  2. 学術雑誌掲載論文(テニュアトラック推進機構)

Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples

http://hdl.handle.net/10458/0002001381
http://hdl.handle.net/10458/0002001381
819ec373-5fd1-4e0b-af7a-da11db929db9
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s41467-025-58837-9.pdf fulltext (866 KB)
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Item type 学術雑誌論文 / Journal Article(1)
公開日 2025-06-23
タイトル
タイトル Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples
言語 en
言語
言語 eng
資源タイプ
資源タイプ journal article
アクセス権
アクセス権 open access
著者 Shioiri, Yuu

× Shioiri, Yuu

en Shioiri, Yuu
The University of Tokyo

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Obata, Keisuke

× Obata, Keisuke

en Obata, Keisuke
The University of Tokyo

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Kawase, Yudai

× Kawase, Yudai

en Kawase, Yudai
The University of Tokyo

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東, 智弘

× 東, 智弘

WEKO 35376
e-Rad_Researcher 80762088

ja 東, 智弘
宮崎大学

ja-Kana ヒガシ, トモヒロ

en Higashi, Tomohiro
University of Miyazaki

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Katayama, Masao

× Katayama, Masao

en Katayama, Masao
The University of Tokyo

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Schleuning, Markus

× Schleuning, Markus

en Schleuning, Markus
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)

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van de Krol, Roel

× van de Krol, Roel

en van de Krol, Roel
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)

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Friedrich, Dennis

× Friedrich, Dennis

en Friedrich, Dennis
Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)

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Abdi, Fatwa Firdaus

× Abdi, Fatwa Firdaus

en Abdi, Fatwa Firdaus
City University of Hong Kong

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Takanabe, Kazuhiro

× Takanabe, Kazuhiro

en Takanabe, Kazuhiro
The University of Tokyo

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抄録
内容記述タイプ Abstract
内容記述 Semiconductor electrodes can catalyze photo-induced redox reactions with light illumination. Photoexcitation produces excited carriers that subsequently transfer to the front and back contacts as determined by the bulk and surface properties of the photoelectrodes. This transfer defines the resultant quasi-Fermi levels of the photo-generated carriers at the photoelectrode surface, which, in turn, impacts the efficiency of surface photoelectrochemical reactions. However, determining such quasi-Fermi levels is not a simple task. In this study, we introduce a method for estimating the quasi-Fermi level of holes using outer-sphere electron transfer reactions. The quasi-Fermi level of holes is estimated by linking the oxidation photocurrent on photoanodes to the separately measured electrode potential on a stable metal electrode. Using this method, the quasi-Fermi level of holes at the surface is monitored in response to variations in applied potential and light intensity. This approach effectively separates the photocurrents of the CdS model electrode between surface redox reaction and photocorrosion, while concurrently quantifying the dynamic quasi-Fermi level at the surface. This work facilitates quantitative understanding of photoelectrochemical reactions on semiconductor electrodes to design green chemical transformation systems.
言語 en
bibliographic_information en : Nature Communications

巻 16, 号 1, p. 3688, 発行日 2025-04-17
出版者
出版者 Springer Science and Business Media LLC
言語 en
ISSN
収録物識別子タイプ EISSN
収録物識別子 20411723
item_10001_relation_14
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1038/s41467-025-58837-9
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Shioiri, Yuu, Obata, Keisuke, Kawase, Yudai, 東, 智弘, Katayama, Masao, Schleuning, Markus, van de Krol, Roel, Friedrich, Dennis, Abdi, Fatwa Firdaus, Takanabe, Kazuhiro, 2025, Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples: Springer Science and Business Media LLC, 3688– p.

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