WEKO3
-
RootNode
アイテム
Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples
http://hdl.handle.net/10458/0002001381
http://hdl.handle.net/10458/0002001381819ec373-5fd1-4e0b-af7a-da11db929db9
名前 / ファイル | ライセンス | アクション |
---|---|---|
![]() |
Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
公開日 | 2025-06-23 | |||||||||||||||||||||||||||||
タイトル | ||||||||||||||||||||||||||||||
タイトル | Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples | |||||||||||||||||||||||||||||
言語 | en | |||||||||||||||||||||||||||||
言語 | ||||||||||||||||||||||||||||||
言語 | eng | |||||||||||||||||||||||||||||
資源タイプ | ||||||||||||||||||||||||||||||
資源タイプ | journal article | |||||||||||||||||||||||||||||
アクセス権 | ||||||||||||||||||||||||||||||
アクセス権 | open access | |||||||||||||||||||||||||||||
著者 |
Shioiri, Yuu
× Shioiri, Yuu
× Obata, Keisuke
× Kawase, Yudai
× 東, 智弘
WEKO
35376
× Katayama, Masao
× Schleuning, Markus
× van de Krol, Roel
× Friedrich, Dennis
× Abdi, Fatwa Firdaus
× Takanabe, Kazuhiro
|
|||||||||||||||||||||||||||||
抄録 | ||||||||||||||||||||||||||||||
内容記述タイプ | Abstract | |||||||||||||||||||||||||||||
内容記述 | Semiconductor electrodes can catalyze photo-induced redox reactions with light illumination. Photoexcitation produces excited carriers that subsequently transfer to the front and back contacts as determined by the bulk and surface properties of the photoelectrodes. This transfer defines the resultant quasi-Fermi levels of the photo-generated carriers at the photoelectrode surface, which, in turn, impacts the efficiency of surface photoelectrochemical reactions. However, determining such quasi-Fermi levels is not a simple task. In this study, we introduce a method for estimating the quasi-Fermi level of holes using outer-sphere electron transfer reactions. The quasi-Fermi level of holes is estimated by linking the oxidation photocurrent on photoanodes to the separately measured electrode potential on a stable metal electrode. Using this method, the quasi-Fermi level of holes at the surface is monitored in response to variations in applied potential and light intensity. This approach effectively separates the photocurrents of the CdS model electrode between surface redox reaction and photocorrosion, while concurrently quantifying the dynamic quasi-Fermi level at the surface. This work facilitates quantitative understanding of photoelectrochemical reactions on semiconductor electrodes to design green chemical transformation systems. | |||||||||||||||||||||||||||||
言語 | en | |||||||||||||||||||||||||||||
bibliographic_information |
en : Nature Communications 巻 16, 号 1, p. 3688, 発行日 2025-04-17 |
|||||||||||||||||||||||||||||
出版者 | ||||||||||||||||||||||||||||||
出版者 | Springer Science and Business Media LLC | |||||||||||||||||||||||||||||
言語 | en | |||||||||||||||||||||||||||||
ISSN | ||||||||||||||||||||||||||||||
収録物識別子タイプ | EISSN | |||||||||||||||||||||||||||||
収録物識別子 | 20411723 | |||||||||||||||||||||||||||||
item_10001_relation_14 | ||||||||||||||||||||||||||||||
関連タイプ | isVersionOf | |||||||||||||||||||||||||||||
識別子タイプ | DOI | |||||||||||||||||||||||||||||
関連識別子 | https://doi.org/10.1038/s41467-025-58837-9 | |||||||||||||||||||||||||||||
出版タイプ | ||||||||||||||||||||||||||||||
出版タイプ | VoR |
Share
Cite as
Shioiri, Yuu, Obata, Keisuke, Kawase, Yudai, 東, 智弘, Katayama, Masao, Schleuning, Markus, van de Krol, Roel, Friedrich, Dennis, Abdi, Fatwa Firdaus, Takanabe, Kazuhiro, 2025, Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples: Springer Science and Business Media LLC, 3688– p.
Loading...