| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2025-01-21 |
| タイトル |
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|
タイトル |
Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
キーワード |
X-ray detectors |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
キーワード |
X-ray SOIPIX |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
キーワード |
Monolithic active pixel sensors |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
キーワード |
Silicon on insulator technology |
| 資源タイプ |
|
|
資源タイプ |
journal article |
| アクセス権 |
|
| 著者 |
Yukumoto, Masataka
森, 浩二
武田, 彩希
西岡, 祐介
Yonemura, Syuto
Izumi, Daisuke
Iwakiri, Uzuki
Tsuru, Takeshi G.
Kurachi, Ikuo
Hagino, Kouichi
Arai, Yasuo
Kohmura, Takayoshi
Tanaka, Takaaki
Kimura, Miraku
Fuchita, Yuta
Yoshida, Taiga
Ikeda, Tomonori
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named “XRPIX”, for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is applied to make it fully depleted. A pinned p-well is introduced at the backside of the insulator layer to reduce a dark current generation at the Si-SiO2 interface and to fix the back-gate voltage of the SOI transistors. An n-well is further introduced between the p-well and the substrate to make a potential barrier between them and suppress a leakage current. An optimization study on the n-well dopant concentration is necessary because a higher dopant concentration could result in a higher potential barrier but also in a larger sense-node capacitance leading to a lower spectroscopic performance, and vice versa. Based on a device simulation, we fabricated five candidate chips having different n-well dopant concentrations. We successfully found out the best n-well design, which suppressed a large leakage current and showed satisfactory X-ray spectroscopic performance. Too low and too high n-well dopant concentration chips showed a large leakage current and degraded X-ray spectroscopic performance, respectively. We also found that the dependency of X-ray spectroscopic performance on the n-well dopant concentration can be largely explained by the difference in sense-node capacitance. |
|
言語 |
en |
| 内容記述 |
|
|
内容記述タイプ |
Other |
|
内容記述 |
Citation: Masataka Yukumoto, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Syuto Yonemura, Daisuke Izumi, Uzuki Iwakiri, Takeshi G. Tsuru, Ikuo Kurachi, Kouichi Hagino, Yasuo Arai, Takayoshi Kohmura, Takaaki Tanaka, Miraku Kimura, Yuta Fuchita, Taiga Yoshida, Tomonori Ikeda, Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1060, 169033-169033, 2024-03, https://doi.org/10.1016/j.nima.2023.169033 |
|
言語 |
en |
| bibliographic_information |
en : Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
巻 1060,
p. 169033-169033,
発行日 2024-03
|
| 出版者 |
|
|
出版者 |
Elsevier BV |
|
言語 |
en |
| ISSN |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
0168-9002 |
| item_10001_relation_14 |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1016/j.nima.2023.169033 |
| 権利 |
|
|
言語 |
en |
|
権利情報 |
© 2024 Elsevier B.V. All rights reserved. |
| 出版タイプ |
|
|
出版タイプ |
NA |
