| Item type |
紀要論文 / Departmental Bulletin Paper(1) |
| 公開日 |
2024-10-23 |
| タイトル |
|
|
タイトル |
電子線照射とその後の回復熱処理によりSi に形成された欠陥準位の非発光再結合評価 |
|
言語 |
ja |
| タイトル |
|
|
タイトル |
Nonradiative recombination of deep defect levels induced by electron-beam irradiation and subsequent thermal annealing in n-Si substrate |
|
言語 |
en |
| 言語 |
|
|
言語 |
jpn |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Si |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Power devices |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Electron irradiation |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Defects |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Spectroscopy |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
departmental bulletin paper |
| ID登録 |
|
|
ID登録 |
10.34481/0002000817 |
|
ID登録タイプ |
JaLC |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
矢田部, 龍彦
原口, 佑斗
碇, 哲雄
福山, 敦彦
佐々木, 駿
佐俣, 秀一
三次, 伯知
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Defects induced by electron beam irradiation and subsequent thermal annealing are used to improve the switching performance of silicon power devices. However, the nature of the defects formed by the irradiation has never been fully clarified. Although defects originating from interstitial carbon (Ci) generated by irradiation are believed to have decreased carrier lifetime, its carrier transition mechanism is still under discussion. Defects induced in n-Si substrates after electron-beam irradiation and subsequent thermal annealing were investigated using Piezoelectric Photo-thermal (PPT) Spectroscopy. PPT technique can defect nonradiative recombination of photo-excited carriers by measuring their generated heat. Deep Level Transient Spectroscopy (DLTS) method was also used to characterize the defect levels. A comparison of the PPT tail-like signal intensity to the defect density and their activation energies obtained from the DLTS suggests that the E3 and E5 defect levels caused the observed PPT tail-like signal. According to the previous DLTS research on Si, the origin of these defects is expected to include Ci. At the same time, the frequency dependence of the PPT signal intensities revealed that the thermal conductivity decreased by irradiation. This fact means that the irradiation treatment introduced crystalline disorder in the sample, as in the case of amorphous Si. |
|
言語 |
en |
| bibliographic_information |
ja : 宮崎大学工学部紀要
en : Memoirs of Faculty of Engineering, University of Miyazaki
巻 53,
p. 65-70,
発行日 2024-10-23
|
| 出版者 |
|
|
出版者 |
宮崎大学工学部 |
|
言語 |
ja |
| 出版者 |
|
|
出版者 |
Faculty of Engineering, University of Miyazaki |
|
言語 |
en |
| ISSN |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
05404924 |
| item_10002_source_id_11 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00732558 |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
本文 (1.1 MB)
