| Item type |
紀要論文 / Departmental Bulletin Paper(1) |
| 公開日 |
2024-10-23 |
| タイトル |
|
|
タイトル |
フォトルミネッセンス法を用いた波状超格子太陽電池における発光再結合過程の評価 |
|
言語 |
ja |
| タイトル |
|
|
タイトル |
Evaluation of Radiative Recombination Process in wire on well Superlattice Solar Cells by Photoluminescence |
|
言語 |
en |
| 言語 |
|
|
言語 |
jpn |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Superlattices |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Quantum wells |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Nanowires |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Solar cells |
| キーワード |
|
|
言語 |
en |
|
主題Scheme |
Other |
|
主題 |
Photoluminescence |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
departmental bulletin paper |
| ID登録 |
|
|
ID登録 |
10.34481/0002000815 |
|
ID登録タイプ |
JaLC |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
駒場, 森太郎
武田, 奈々
浅見, 明太
杉山, 正和
碇, 哲雄
福山, 敦彦
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Among the highly efficient quantum well (QW) solar cells, we developed a wire-on-well (WoW) structure using InGaAs/GaAs/GaAsP superlattice (SL) device fabrication technology. This structure modifies the local concentration of carriers in QW and lengthens the carrier lifetime to increase the fill factor. However, the reason is not yet clear. To understand the carrier transition process of WoW, we investigated the photoluminescence of WoW and conventional SL. Regarding the PL spectra of WoW at 4 K, two characteristic peaks at 1.39 and 1.34 eV were observed. Both transitions are due to the recombination between the first quantum level of electron (e1) and that of heavy hole (hh1). The most prominent result in the WoW structure is the blue shift attributed to the 1.34 eV peak induced when the laser excitation power increased. We consider that the blueshift occurred the screening of the piezoelectric field due to photoexcited carriers generated in the WoW structure. Furthermore, the position of the maximum carrier existing probabilities for e1 and hh1 differs in the WoW structure. Thus, the carrier transition required a positional change. We consider that the long carrier lifetime of WoW is obtained by this carrier transition that requires a change in position. On the other hand, the peak of the e1-hh1 transition obtained at 1.39 eV had no shift. We considered the peak attributed to the conventional SL formed in the early stage of crystal growth of WoW. We also discussed the peak attributed to GaAs around 1.50 eV. We considered that this peak is due to GaAs with two different doping concentrations from crystal growth with triethylgallium at 530°C and trimethylgallium at 610°C. |
|
言語 |
en |
| bibliographic_information |
ja : 宮崎大学工学部紀要
en : Memoirs of Faculty of Engineering, University of Miyazaki
巻 53,
p. 51-56,
発行日 2024-10-23
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| 出版者 |
|
|
出版者 |
宮崎大学工学部 |
|
言語 |
ja |
| 出版者 |
|
|
出版者 |
Faculty of Engineering, University of Miyazaki |
|
言語 |
en |
| ISSN |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
05404924 |
| item_10002_source_id_11 |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA00732558 |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
本文 (1.7 MB)
