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Photothermal microscopy of silicon epitaxial layer on silicon substrate with depletion region at the interface
http://hdl.handle.net/10458/4238
http://hdl.handle.net/10458/4238af091a7c-051a-47ca-8da2-716d63e2c906
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
553ikari.pdf (659.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2012-12-18 | |||||
| タイトル | ||||||
| タイトル | Photothermal microscopy of silicon epitaxial layer on silicon substrate with depletion region at the interface | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
碇, 哲雄
× 碇, 哲雄× Roger, J. P.× Fournier, D |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Photothermal microscopy has been used for investigating semiconductor materials to evaluate carrier diffusivity, lifetime, and surface recombination velocity. The effects of the depletion region between epitaxial and substrate Si with different conduction types are studied. Although the observed curves are well explained by the theoretical predictions for surface reflectivity, no drastic change is observed for the different structures. This may be due to the fact that the thickness of the epitaxial layer is too large to reveal clearly the effect of the depletion region at the PN junction. However, the result for low-frequency modulation at 10 kHz may indicate this effect. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Review of Scientific Instruments 巻 74, 号 1, p. 553-555, 発行日 2003-01 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | ©2003 American Institute of Physics | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
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Cite as
碇, 哲雄, Roger, J. P., Fournier, D, 2003, Photothermal microscopy of silicon epitaxial layer on silicon substrate with depletion region at the interface: American Institute of Physics, 553–555 p.
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