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Investigation of the annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs utilizing the piezoelectric photothermal technique
http://hdl.handle.net/10458/4236
http://hdl.handle.net/10458/4236a8183a7d-aacb-4176-b574-5d4abb6e1c86
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
550ikari.pdf (681.0 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2012-12-18 | |||||
| タイトル | ||||||
| タイトル | Investigation of the annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs utilizing the piezoelectric photothermal technique | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ | journal article | |||||
| 著者 |
福山, 敦彦
× 福山, 敦彦× 碇, 哲雄× Ohno, R× Akashi, Y |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The electron nonradiative recombination process of photoexcited carriers in as-grown and annealed n = Al0.2Ga0.8As/GaAs heterostructure samples is investigated by using piezoelectric photothermal（PPT） spectroscopy. The PPT signal above the band-gap energy of GaAs substrate decreased when the sample was annealed at 815 °C. In the frequency dependent measurements, the deviations from the 1/f linear function are clearly observed in the AlGaAs/GaAs samples. This critical deviation frequency was found to shift to the lower frequency region by annealing. Our experimental results are explained by assuming that the sample annealing generates an unknown deep level in the AlGaAs epitaxial layer region and this level effectively traps the photoexcited carriers nonradiatively. | |||||
| 言語 | en | |||||
| 書誌情報 |
en : Review of Scientific Instruments 巻 74, 号 1, p. 550-552, 発行日 2003-01 |
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| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | ©2003 American Institute of Physics | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
