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GaAs量子ドットにおけるPLピークエネルギー温度依存性の励起光強度による影響
http://hdl.handle.net/10458/00010269
http://hdl.handle.net/10458/0001026917cbf632-edc7-4309-8e45-7625e5e322e3
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (1.4 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2021-10-18 | |||||
| タイトル | ||||||
| タイトル | GaAs量子ドットにおけるPLピークエネルギー温度依存性の励起光強度による影響 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Effect of Excitation Light Intensity on Temperature Dependence of Photoluminescence Peak Energy in GaAs Quantum Dots | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Quantum dots | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | GaAs | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | AlGaAs | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Droplet epitaxy | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Photoluminescence | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Excitation light intensity | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
中村, 泰樹
× 中村, 泰樹× 川畑, 公佑× 迫田, 理久× 間野, 高明× 野田, 武司× 碇, 哲雄× 福山, 敦彦× Nakamura, Taiju× Kawabata, Kosuke× Sakoda, Riku× 間野, 高明× Noda, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Photoluminescence (PL) measurements of GaAs quantum dots (QDs) were carried out from 4 K to room temperatures. The results showed an unusual temperature dependence of the PL peak energy. When the temperature increased, the peak energy showed a red-shift from the so-called Varshni's curve around 50 K followed by an additional blue-shift above 150K. This unusual temperature dependence has been explained by using a steady-state model with the size distribution of the QDs. Our recent model calculation revealed that the shift of the peak energy from Varshni’s curve should be decreased when a sufficient number of carriers are supplied to the QDs. Therefore, PL measurements with changing the excitation intensity were performed. Although the expected decrease was experimentally confirmed, the amount of the shift was not sufficient to explain the obtained data by our steady-state model. Therefore, we considered a modified model where the three kinds of size distribution functions appeared in the QDs. This is because the PL spectra at 4 K seem to be decomposed into three broad peaks and the atomic-force-microscopy measurements suggested that the size distribution consisted of three dominant maxima. This model is easier for understanding the capture and emission of the photoexcited carriers in the QDs. The results showed that observed unusual temperature dependence was explained by considering both the size distribution of the QDs as well as the carrier redistribution caused by the capture and the emission processes between the QDs and the barrier layer. |
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| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 50, p. 69-74, 発行日 2021-09-28 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
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中村, 泰樹, 川畑, 公佑, 迫田, 理久, 間野, 高明, 野田, 武司, 碇, 哲雄, 福山, 敦彦, Nakamura, Taiju, Kawabata, Kosuke, Sakoda, Riku, 間野, 高明, Noda, Takeshi, n.d., GaAs量子ドットにおけるPLピークエネルギー温度依存性の励起光強度による影響: 宮崎大学工学部, 69–74 p.
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