{"created":"2023-05-15T10:01:45.294579+00:00","id":6407,"links":{},"metadata":{"_buckets":{"deposit":"6b1ed273-825c-4e9d-8c33-7e64e430390d"},"_deposit":{"created_by":5,"id":"6407","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"6407"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00006407","sets":["73","73:36","73:36:330","73:36:330:484"]},"author_link":["33686","33684","33061","33059","7290","28145","33068","33058","33066","7289","33065"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-09-28","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"74","bibliographicPageStart":"69","bibliographicVolumeNumber":"50","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Photoluminescence (PL) measurements of GaAs quantum dots (QDs) were carried out from 4 K to room\ntemperatures. The results showed an unusual temperature dependence of the PL peak energy. When the temperature increased, the peak energy showed a red-shift from the so-called Varshni's curve around 50 K followed by an additional blue-shift above 150K. This unusual temperature dependence has been explained by using a steady-state model with the size distribution of the QDs. Our recent model calculation revealed that the shift of the peak energy from Varshni’s curve should be decreased when a sufficient number of carriers are supplied to the QDs. Therefore, PL measurements with changing the excitation intensity were performed. Although the expected decrease was experimentally confirmed, the amount of the shift was not sufficient to explain the obtained data by our steady-state model. Therefore, we considered a modified model where the three kinds of size distribution functions appeared in the QDs. This is because the PL spectra at 4 K seem to be decomposed into three broad peaks and the atomic-force-microscopy measurements suggested that the size distribution consisted of three dominant maxima. This model is easier for understanding the capture and emission of the photoexcited carriers in the QDs. The results showed that observed unusual temperature dependence was explained by considering both the size distribution of the QDs as well as the carrier redistribution caused by the capture and the emission processes between the QDs and the barrier layer.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"中村, 泰樹","creatorNameLang":"ja"},{"creatorName":"ナカムラ, タイジュ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"川畑, 公佑","creatorNameLang":"ja"},{"creatorName":"カワバタ, コウスケ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"迫田, 理久","creatorNameLang":"ja"},{"creatorName":"サコダ, リク","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"間野, 高明","creatorNameLang":"ja"},{"creatorName":"マノ, タカアキ","creatorNameLang":"ja-Kana"},{"creatorName":"Mano, Takaaki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"野田, 武司","creatorNameLang":"ja"},{"creatorName":"ノダ, 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アツヒコ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Nakamura, Taiju","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawabata, Kosuke","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sakoda, Riku","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"間野, 高明","creatorNameLang":"ja"},{"creatorName":"マノ, タカアキ","creatorNameLang":"ja-Kana"},{"creatorName":"Mano, Takaaki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Noda, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-10-18"}],"displaytype":"detail","filename":"Engineering_50_p69-p74.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/6407/files/Engineering_50_p69-p74.pdf"},"version_id":"12655118-5e77-4780-9b94-58cdc979bcbb"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Quantum dots","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"GaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"AlGaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Droplet epitaxy","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Photoluminescence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Excitation light intensity","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaAs量子ドットにおけるPLピークエネルギー温度依存性の励起光強度による影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaAs量子ドットにおけるPLピークエネルギー温度依存性の励起光強度による影響","subitem_title_language":"ja"},{"subitem_title":"Effect of Excitation Light Intensity on Temperature Dependence of Photoluminescence Peak Energy in GaAs Quantum Dots","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","484"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-10-18"},"publish_date":"2021-10-18","publish_status":"0","recid":"6407","relation_version_is_last":true,"title":["GaAs量子ドットにおけるPLピークエネルギー温度依存性の励起光強度による影響"],"weko_creator_id":"5","weko_shared_id":-1},"updated":"2023-11-07T02:16:59.006431+00:00"}