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光ヘテロダイン光熱変位測定による半導体の熱物性評価(1) 理論解析モデルの構築
http://hdl.handle.net/10458/00010454
http://hdl.handle.net/10458/00010454d8b11e3f-4695-4032-8755-5b42fb0eb11f
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
本文 (1.6 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2022-12-06 | |||||
| タイトル | ||||||
| タイトル | 光ヘテロダイン光熱変位測定による半導体の熱物性評価(1) 理論解析モデルの構築 | |||||
| 言語 | ja | |||||
| タイトル | ||||||
| タイトル | Evaluation of thermal properties of semiconductors by using a laser heterodyne photothermal displacement measurement (1) Construction of theoretical analysis model | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Thermal conductivity | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | LH-PD method | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Semiconductor | |||||
| キーワード | ||||||
| 言語 | en | |||||
| 主題Scheme | Other | |||||
| 主題 | Carrier diffusion | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| 著者 |
原田, 尚吾
× 原田, 尚吾× 森田, 浩右× 大山, 博暉× 原田, 知季× 碇, 哲雄× 福山, 敦彦× Harada, Shogo× Morita, Kosuke× Ohyama, Hiroki× 原田, 知季 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The heat generated by the electronic device operation causes a decreasing its performance. Therefore, it is necessary to evaluate the heat generation and its propagation in semiconductors. We build a laser eterodyne photothermal displacement (LH-PD) system to evaluate thermal properties of semiconductors. When an xcitation laser is irradiated on the semiconductor surface, the surface is thermally expanded under the influence of heat generated by nonradiative recombination of the photoexcited carriers. The LH-PD method can directly detect a surface displacement and its time variation by non-contact and non-destructive. Moreover, there is a possibility to evaluate thermal properties such as thermal conductivity (κ) by reproducing the time variation of a surface displacement with theoretical calculations. We carried out LH-PD measurements and theoretical calculations based on a thermal diffusion equation with the photoexcited carrier diffusion to verify their validity using Si and GaAs substrate which are already known physical properties. As a result, the calculated results agreed well with the experiments. Therefore, we found that heat conduction and carrier diffusion affect the time variation of the surface displacement. Consequently, it was clearly shown that the LH-PD method was useful for evaluating thermal properties of semiconductors. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 51, p. 45-49, 発行日 2022-11-30 |
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| 出版者 | ||||||
| 出版者 | 宮崎大学工学部 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, University of Miyazaki | |||||
| 言語 | en | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 05404924 | |||||
| 書誌レコードID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00732558 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.miyazaki-u.ac.jp/tech/research/memoirs/ | |||||
| 関連名称 | 宮崎大学工学部 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
