{"created":"2023-05-15T10:01:45.380491+00:00","id":6409,"links":{},"metadata":{"_buckets":{"deposit":"4ae07c7d-758f-4166-b45e-e9060199f95e"},"_deposit":{"created_by":9,"id":"6409","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"6409"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00006409","sets":["73","73:36","73:36:330","73:36:330:484"]},"author_link":["33050","30403","12047","33693","31516","33747","33692","33689","33688"],"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-09-28","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"81","bibliographicPageStart":"79","bibliographicVolumeNumber":"50","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Photoluminescence (PL) in mid-infrared region on InAs/GaSb superlattice structure grown by MOVPE method was studied. In the case of InAs/GaSb : 2.8/13.4 nm superlattice, PL peak energy and temperature dependence were good agreement with the calculated values of k･p perturbation method. The emission between the energy levels in the miniband corresponding to the bandgap was observed at low temperature or under low excitation conditions. At room temperature, the broad luminescence centered at 4.2 μm was observed. The emission corresponds to between the second smaller energy level. The results show that the energy levels higher than the bandgap are important for the emission from superlattice at higher temperature.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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superlattice","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Mid-infrared","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"k･p perturbation method","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaSb層厚を変化させたInAs/GaSb超格子に関する中赤外フォトルミネッセンスの温度依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaSb層厚を変化させたInAs/GaSb超格子に関する中赤外フォトルミネッセンスの温度依存性","subitem_title_language":"ja"},{"subitem_title":"Temperature Dependence of Mid-infrared Photoluminescence for InAs/GaSb Superlattice with Different GaSb Layer Thickness","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","484"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-10-18"},"publish_date":"2021-10-18","publish_status":"0","recid":"6409","relation_version_is_last":true,"title":["GaSb層厚を変化させたInAs/GaSb超格子に関する中赤外フォトルミネッセンスの温度依存性"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-01-16T04:39:35.442204+00:00"}