{"created":"2023-07-29T09:53:24.637769+00:00","links":{},"metadata":{"_buckets":{"deposit":"290753fc-5ac5-48b4-8bc1-737a7b4a18d1"},"_deposit":{"created_by":9,"id":"6408.3","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"6408.3"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00006408.3","sets":["73","73:36","73:36:330","73:36:330:484"]},"author_link":["31487","33050","30403","12047","31491","33054"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-09-28","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"78","bibliographicPageStart":"75","bibliographicVolumeNumber":"50","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The crystallinity of the impurity-doped InAs lattice relaxation layer grown by MOVPE method for InAs / GaSb superlattice on GaAs substrate was evaluated by Raman scattering method. It was confirmed that a small amount of Zn doping reduced the disorder of the rystal structure in InAs film and the surface roughness of InAs layer. While it was also found that Se doping was not improved.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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