{"created":"2023-05-15T10:01:44.775467+00:00","id":6395,"links":{},"metadata":{"_buckets":{"deposit":"ebb54f88-6f8b-4a88-97a7-96a7b08309f4"},"_deposit":{"created_by":5,"id":"6395","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"6395"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00006395","sets":["73","73:36","73:36:330","73:36:330:484"]},"author_link":["12874","14214","30096","30474"],"control_number":"6395","item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-09-28","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"112","bibliographicPageStart":"105","bibliographicVolumeNumber":"50","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The purpose of this study is to assist the operation and maintenance of PV systems by studying the resistive conditions of bypass diode used in PV modules and to develop the diagnosis and on-line monitoring system for small and medium scale PV systems. This paper analyzes the breakdown and non-breakdown\ncharacteristics of Schottky diodes and PN Junction diodes by application of various ranges of voltages by Lightning surge simulator (LSS). In this study, we compare and discuss the numerical data of experimental results obtained under variable voltage applications of LSS are compared for both diodes on the resistive\ncharacteristics after breakdown, waveforms of voltage and current and the behaviors of dynamic curves.\nAn applied voltage, on which the breakdown of diode takes place and dramatic change in I-V characteristics occurs, is called “critical voltage (Vc)”. From the study, it was observed that the magnitude of critical voltage (Vc) of PN junction diodes is higher than that of Schottky diodes in reverse direction although\nthere is almost the same in forward direction. The authors are also probing that the possibility of more sensitive monitoring and diagnosis system for the resistive bypass diode in PV system based on numerical simulation results. The great difference of Vc is reflected for the dynamic relationship between voltage and current in reverse biasing for both diodes.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Latt, Khin Maung ","creatorNameLang":"en"}],"familyNames":[{"familyName":"Latt","familyNameLang":"en"}],"givenNames":[{"givenName":"Khin Maung ","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30096","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Torihara, Ryo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30474","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"0000000106573887","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"https://isni.org/isni/0000000106573887"}],"affiliationNames":[{"affiliationName":"宮崎大学","affiliationNameLang":"ja"},{"affiliationName":"University of Miyazaki","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"迫田, 達也","creatorNameLang":"ja"},{"creatorName":"サコダ, タツヤ","creatorNameLang":"ja-Kana"},{"creatorName":"Sakoda, Tatsuya","creatorNameLang":"en"}],"familyNames":[{"familyName":"迫田","familyNameLang":"ja"},{"familyName":"サコダ","familyNameLang":"ja-Kana"},{"familyName":"Sakoda","familyNameLang":"en"}],"givenNames":[{"givenName":"達也","givenNameLang":"ja"},{"givenName":"タツヤ","givenNameLang":"ja-Kana"},{"givenName":"Tatsuya","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12874","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"90310028","nameIdentifierScheme":"e-Rad_Researcher","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=90310028"}]},{"creatorNames":[{"creatorName":"Hayashi, Noriyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14214","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-10-18"}],"displaytype":"detail","filename":"Engineering_50_p105-p112.pdf","filesize":[{"value":"2.0 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/6395/files/Engineering_50_p105-p112.pdf"},"version_id":"34d0e488-5cf1-4365-bbff-00d7a92b058b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Dynamic I-V characteristics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Lightning impulse voltage","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Bypass diodes","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Critical voltage","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Forward direction","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Reverse direction","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Dynamic I-V Characteristics of Schottky Diodes and PN Junction Diodes When Lightning Impulse Voltage Is Applied on Them","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Dynamic I-V Characteristics of Schottky Diodes and PN Junction Diodes When Lightning Impulse Voltage Is Applied on Them","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","484"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-10-18"},"publish_date":"2021-10-18","publish_status":"0","recid":"6395","relation_version_is_last":true,"title":["Dynamic I-V Characteristics of Schottky Diodes and PN Junction Diodes When Lightning Impulse Voltage Is Applied on Them"],"weko_creator_id":"5","weko_shared_id":-1},"updated":"2025-01-10T02:19:55.115248+00:00"}