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Dynamic I-V Characteristics of Schottky Diodes and PN Junction Diodes When Lightning Impulse Voltage Is Applied on Them
http://hdl.handle.net/10458/00010257
http://hdl.handle.net/10458/0001025765f7a036-dcc4-41c3-98f2-8a140212058e
名前 / ファイル | ライセンス | アクション |
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2021-10-18 | |||||
タイトル | ||||||
タイトル | Dynamic I-V Characteristics of Schottky Diodes and PN Junction Diodes When Lightning Impulse Voltage Is Applied on Them | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Dynamic I-V characteristics | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Lightning impulse voltage | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Bypass diodes | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Critical voltage | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Forward direction | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Reverse direction | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
著者 |
Latt, Khin Maung
× Latt, Khin Maung× Torihara, Ryo× 迫田, 達也× Hayashi, Noriyuki |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The purpose of this study is to assist the operation and maintenance of PV systems by studying the resistive conditions of bypass diode used in PV modules and to develop the diagnosis and on-line monitoring system for small and medium scale PV systems. This paper analyzes the breakdown and non-breakdown characteristics of Schottky diodes and PN Junction diodes by application of various ranges of voltages by Lightning surge simulator (LSS). In this study, we compare and discuss the numerical data of experimental results obtained under variable voltage applications of LSS are compared for both diodes on the resistive characteristics after breakdown, waveforms of voltage and current and the behaviors of dynamic curves. An applied voltage, on which the breakdown of diode takes place and dramatic change in I-V characteristics occurs, is called “critical voltage (Vc)”. From the study, it was observed that the magnitude of critical voltage (Vc) of PN junction diodes is higher than that of Schottky diodes in reverse direction although there is almost the same in forward direction. The authors are also probing that the possibility of more sensitive monitoring and diagnosis system for the resistive bypass diode in PV system based on numerical simulation results. The great difference of Vc is reflected for the dynamic relationship between voltage and current in reverse biasing for both diodes. |
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言語 | en | |||||
書誌情報 |
ja : 宮崎大学工学部紀要 en : Memoirs of Faculty of Engineering, University of Miyazaki 巻 50, p. 105-112, 発行日 2021-09-28 |
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出版者 | ||||||
出版者 | 宮崎大学工学部 | |||||
言語 | ja | |||||
出版者 | ||||||
出版者 | Faculty of Engineering, University of Miyazaki | |||||
言語 | en | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 05404924 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00732558 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |