@article{oai:miyazaki-u.repo.nii.ac.jp:00006202,
 author = {浅生, 大輝 and Aso, Taiki and 大石, 優貴 and Ohishi, Yuki and 今村, 優希 and Imamura, Yuki and Arai, Masakazu and 荒井, 昌和 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 浅生, 大輝 and Aso, Taiki and 大石, 優貴 and Ohishi, Yuki and 今村, 優希 and Imamura, Yuki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Sep},
 note = {InAs/GaSb superlattices(SL) with systematic change of layer thickness grown by metalorganic chemical vapor deposition analyzed by Raman scattering method. As a result, a change in the peak shape of the Raman spectrum was observed in the superlattices having different film thicknesses. In the InAs/GaSb superlattices, a peak due to Ga-As atomic bonds that does not exist as a composition of SL was confirmed. When the layer thickness was smaller, the degree of mixing of As into the GaSb layer increased due to the influence of the residual gas.},
 pages = {69--72},
 title = {ラマン散乱法を用いた有機金属気相成長法で作製したInAs/GaSb超格子の層厚依存性の評価},
 volume = {49},
 year = {2020},
 yomi = {アソウ, タイキ and オオイシ, ユキ and イマムラ, ユキ and アライ, マサカズ and マエダ, コウジ and アソウ, タイキ and オオイシ, ユキ and イマムラ, ユキ}
}