{"created":"2023-05-15T10:46:45.040631+00:00","links":{},"metadata":{"_buckets":{"deposit":"4e02225b-a426-4394-ba06-c6c69e4487a4"},"_deposit":{"id":"6202.1","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"6202.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00006202.1","sets":["73:36:330:469"]},"author_link":["33048","33049","33050","30403","12047","33052","33053","33054"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"72","bibliographicPageStart":"69","bibliographicVolumeNumber":"49","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"InAs/GaSb superlattices(SL) with systematic change of layer thickness grown by metalorganic chemical vapor deposition analyzed by Raman scattering method. As a result, a change in the peak shape of the Raman spectrum was observed in the superlattices having different film thicknesses. In the InAs/GaSb superlattices, a peak due to Ga-As atomic bonds that does not exist as a composition of SL was confirmed. When the layer thickness was smaller, the degree of mixing of As into the GaSb layer increased due to the influence of the residual gas.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"浅生, 大輝","creatorNameLang":"ja"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大石, 優貴","creatorNameLang":"ja"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"今村, 優希","creatorNameLang":"ja"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"荒井, 昌和","creatorNameLang":"ja"},{"creatorName":"アライ, マサカズ","creatorNameLang":"ja-Kana"},{"creatorName":"Arai, Masakazu","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Maeda, Koji","creatorNameLang":"en"},{"creatorName":"前田, 幸治","creatorNameLang":"ja"},{"creatorName":"マエダ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Maeda, Kouji","creatorNameLang":"en"}],"familyNames":[{},{},{},{}],"givenNames":[{},{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Aso, Taiki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ohishi, Yuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Imamura, Yuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-10-30"}],"displaytype":"detail","filename":"Engineering_49_p69.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/6202.1/files/Engineering_49_p69.pdf"},"version_id":"17a387c3-95f0-430e-9800-42007a0969fc"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"MOVPE","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"InAs/GaSb","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Superlattice","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Raman","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"phonon","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"mixed crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"ラマン散乱法を用いた有機金属気相成長法で作製したInAs/GaSb超格子の層厚依存性の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ラマン散乱法を用いた有機金属気相成長法で作製したInAs/GaSb超格子の層厚依存性の評価","subitem_title_language":"ja"},{"subitem_title":"The layer thickness dependence of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition evaluated by Raman scattering method","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["469"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-10-30"},"publish_date":"2020-10-30","publish_status":"0","recid":"6202.1","relation_version_is_last":true,"title":["ラマン散乱法を用いた有機金属気相成長法で作製したInAs/GaSb超格子の層厚依存性の評価"],"weko_creator_id":"5","weko_shared_id":-1},"updated":"2023-07-17T12:26:29.134015+00:00"}