@article{oai:miyazaki-u.repo.nii.ac.jp:00006202.1,
 author = {浅生, 大輝 and 大石, 優貴 and 今村, 優希 and 荒井, 昌和 and Arai, Masakazu and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and Aso, Taiki and Ohishi, Yuki and Imamura, Yuki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Sep},
 note = {InAs/GaSb superlattices(SL) with systematic change of layer thickness grown by metalorganic chemical vapor deposition analyzed by Raman scattering method. As a result, a change in the peak shape of the Raman spectrum was observed in the superlattices having different film thicknesses. In the InAs/GaSb superlattices, a peak due to Ga-As atomic bonds that does not exist as a composition of SL was confirmed. When the layer thickness was smaller, the degree of mixing of As into the GaSb layer increased due to the influence of the residual gas.},
 pages = {69--72},
 title = {ラマン散乱法を用いた有機金属気相成長法で作製したInAs/GaSb超格子の層厚依存性の評価},
 volume = {49},
 year = {2020},
 yomi = {アライ, マサカズ and マエダ, コウジ}
}