{"created":"2023-05-15T10:53:04.478682+00:00","links":{},"metadata":{"_buckets":{"deposit":"7265d268-949d-465c-bc8b-3d1d994a9c54"},"_deposit":{"id":"5874.1","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"5874.1"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00005874.1","sets":["73","73:36","73:36:330:329"]},"author_link":["31525","31526","31527","31528","12047","14196","31531","31532","31533","31534"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ラマンブンコウホウ ニ ヨル チッソブンプ ノ コトナ ルGaAsNヒマク ノ アニー ルコウカ","subitem_alternative_title_language":"ja-Kana"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"78","bibliographicPageStart":"75","bibliographicVolumeNumber":"48","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"GaAsN thin films with nonhomogenious N distribution which average nitrogen concentration was 0.5% was grown the atomic layer epitaxy method. The sample was evaluated by Raman spectroscopy. No difference between normal mixed crystal film and most nonhomogenious N distribution film was obtained. It was impossible to directly detect thedetect the N nonhomogeneity in dilute N concentration. As a result of annealing these samples, the crystallinity became the best at 700 ℃ and disordered thereafter. This was not consistent with the result of the mobility change","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"和田, 季己","creatorNameLang":"ja"},{"creatorName":"ワダ, トシキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"31525","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"浅生, 大輝","creatorNameLang":"ja"},{"creatorName":"アソウ, タイキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"31526","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"上田, 大貴","creatorNameLang":"ja"},{"creatorName":"ウエダ, ダイキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"31527","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"河野, 将大","creatorNameLang":"ja"},{"creatorName":"カワノ, マサヒロ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"31528","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Maeda, Koji","creatorNameLang":"en"},{"creatorName":"前田, 幸治","creatorNameLang":"ja"},{"creatorName":"マエダ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Maeda, Kouji","creatorNameLang":"en"}],"familyNames":[{"familyName":"Maeda","familyNameLang":"en"},{"familyName":"前田","familyNameLang":"ja"},{"familyName":"マエダ","familyNameLang":"ja-Kana"},{"familyName":"Maeda","familyNameLang":"en"}],"givenNames":[{"givenName":"Koji","givenNameLang":"en"},{"givenName":"幸治","givenNameLang":"ja"},{"givenName":"コウジ","givenNameLang":"ja-Kana"},{"givenName":"Kouji","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12047","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"50219268","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=50219268"}]},{"creatorNames":[{"creatorName":"鈴木, 秀俊","creatorNameLang":"ja"},{"creatorName":"スズキ, ヒデトシ","creatorNameLang":"ja-Kana"},{"creatorName":"Suzuki, Hidetoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14196","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wada, Toshiki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"31531","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Aso, Taiki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"31532","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ueda, Daiki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"31533","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawano, Mashahir","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"31534","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"75-78.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/5874.1/files/75-78.pdf"},"version_id":"a8fff063-baa6-4ea1-99d1-1ac2dad63c1e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ALE, Raman, GaAsN, N distribution, annealing, Crystallinity","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"ラマン分光法による窒素分布の異なるGaAsN 薄膜のアニール効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ラマン分光法による窒素分布の異なるGaAsN 薄膜のアニール効果","subitem_title_language":"ja"},{"subitem_title":"Effects of Annealing in GaAsN Films with Different N Distributions Measured by Raman Spectroscopy","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["36","73","329"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"5874.1","relation_version_is_last":true,"title":["ラマン分光法による窒素分布の異なるGaAsN 薄膜のアニール効果"],"weko_creator_id":"2","weko_shared_id":2},"updated":"2023-07-29T11:20:13.804468+00:00"}