@article{oai:miyazaki-u.repo.nii.ac.jp:00005873.3,
 author = {若城, 玲亮 and 大濱, 寛士 and 山形, 勇也 and 荒井, 昌和 and Arai, Masakazu and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and Wakaki, Ryosuke and Ohama, Hiroshi and Yamagata, Yuya},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {The optical properties of the InAs / GaSb superlattice grown by the MOVPE method were investigated. The optical properties of the InAs / GaSb superlattice were evaluated from the viewpoint of temperature dependence and excitation intensity dependence in mid-infrared using photoluminescence (PL). In temperature dependence of PL emission energy, the S shape due to potential fluctuation in interface layer was observed. As the layer thickness of the superlattice increased from 5 to 9 nm, the emission wavelength increased from 3.3 to 5.1 μm at 20K.},
 pages = {69--73},
 title = {MOVPE 法で作製した層厚の異なるInAs/GaSb 超格子の光学特性評価},
 volume = {48},
 year = {2019},
 yomi = {ワカキ, リョウスケ and オハマ, ヒロシ and ヤマガタ, ユウタ and アライ, マサカズ and マエダ, コウジ}
}