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It was found that when the GaSb layer was thin, the As ratio in GaAsSb was high, and when the GaSb layer was thick, almost no As was incorporated. Regarding the GaSb layer, the result of mixed crystal ratio from raman measurement almost agreed with the result from X-ray diffraction method.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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measurement","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"9","path":["73","36","330","329"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"5870","relation_version_is_last":true,"title":["MOVPE 法で作製したGaAsSb 層厚の異なるInAs/GaAsSb超格子のラマン測定による各層の評価について"],"weko_creator_id":"9","weko_shared_id":-1},"updated":"2025-01-16T04:39:33.991814+00:00"}