@article{oai:miyazaki-u.repo.nii.ac.jp:00005870,
 author = {大石, 優貴 and Ohishi, Yuki and 浅生, 大輝 and Aso, Taiki and Arai, Masakazu and 荒井, 昌和 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and Oishi, Yuki and 浅生, 大輝 and Aso, Taiki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {The composition of each layer in InAs/GaSb superlattices with different thickness GaSb layer grown by MOVPE were investigated by raman scattering method. It was found that when the GaSb layer was thin, the As ratio in GaAsSb was high, and when the GaSb layer was thick, almost no As was incorporated. Regarding the GaSb layer, the result of mixed crystal ratio from raman measurement almost agreed with the result from X-ray diffraction method.},
 pages = {55--58},
 title = {MOVPE 法で作製したGaAsSb 層厚の異なるInAs/GaAsSb超格子のラマン測定による各層の評価について},
 volume = {48},
 year = {2019},
 yomi = {オオイシ, ユキ and アソウ, タイキ and アライ, マサカズ and マエダ, コウジ and アソウ, タイキ}
}