{"created":"2023-05-15T10:01:14.454501+00:00","id":5760,"links":{},"metadata":{"_buckets":{"deposit":"7f4ab1ec-edd2-46fc-b7ab-15ad7871b418"},"_deposit":{"created_by":5,"id":"5760","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"5760"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00005760","sets":["71","71:35"]},"author_link":["6715","30970"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"122","bibliographicPageStart":"117","bibliographic_titles":[{"bibliographic_title":"International Conference on Science, Technology & Education (ICSTE 2018)","bibliographic_titleLang":"en"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this paper, we present indium zinc oxide (IZO) conducting thin film used by RF magnetron sputtering method on the condition of gas pressure and discharge power at In2O3:ZnO (90:10wt%) on polyethylene terephthalate (PET) for electronic devices application. The effects of the gas pressure and discharge power by RF magnetron sputtering were studied this experimentally. The surface properties were analyzed by XRD pattern, AFM and FWHM, and the electrical properties were analyzed by the electrical resistivity. IZO films show sharper XRD peaks (222) is located at 2θ = 30.54° at substrate temperature 100℃. The 10 mTorr for gas pressure and 100 W for discharge power are the strongest and optimum, which gives the optical transmittance of 91% and lowest resistivity of ~5.34×10^-4 Ω-cm. The appropriate condition of the used gas pressure and discharge powers in the RF sputtering can be improved the IZO transparent conducting films.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10003_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Pakpoom, Chansri","creatorNameLang":"en"}],"familyNames":[{"familyName":"Pakpoom","familyNameLang":"en"}],"givenNames":[{"givenName":"Chansri","givenNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30970","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Sung, Youl-Moon","creatorNameLang":"en"},{"creatorName":"Sung, Youl Moon","creatorNameLang":"en"},{"creatorName":"成, 烈汶","creatorNameLang":"ja"},{"creatorName":"ソン, ヤルブン","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Sung","familyNameLang":"en"},{"familyName":"Sung","familyNameLang":"en"},{"familyName":"成","familyNameLang":"ja"},{"familyName":"ソン","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Youl-Moon","givenNameLang":"en"},{"givenName":"Youl Moon","givenNameLang":"en"},{"givenName":"烈汶","givenNameLang":"ja"},{"givenName":"ヤルブン","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"6715","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"p117_icste2018.pdf","filesize":[{"value":"918.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/5760/files/p117_icste2018.pdf"},"version_id":"a43f8dbe-4c0d-4400-a067-9585baabc389"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Gas pressure, discharge power, indium zinc oxide, transparent conductive oxide, PET","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Influence of Electrical and Surface Properties IZO Transparent Conducting Film on PET used by RF Magnetron Sputtering Method at Low Temperature","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of Electrical and Surface Properties IZO Transparent Conducting Film on PET used by RF Magnetron Sputtering Method at Low Temperature","subitem_title_language":"en"}]},"item_type_id":"10003","owner":"5","path":["71","35"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"5760","relation_version_is_last":true,"title":["Influence of Electrical and Surface Properties IZO Transparent Conducting Film on PET used by RF Magnetron Sputtering Method at Low Temperature"],"weko_creator_id":"5","weko_shared_id":-1},"updated":"2024-10-03T06:24:29.696708+00:00"}