@article{oai:miyazaki-u.repo.nii.ac.jp:00005661,
 author = {富永, 姫香 and Tominaga, Himeka and Yoshino, Kenji and 吉野, 賢二 and 富永, 姫香 and Tominaga, Himeka},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Non-doped ZnMgO thin film on white glass was grown at room temperature by spin-coated using di-butylmagnesium diethylzinc - based solution under nitrogen atmosphere. And obtained samples were annealed 450 ˚C for 5 min. The di-butylmagnesium was used as magnesium dopant (0~40 mol %) for ZnO materials. The carrier concentration decreased, resistivity increased with increasing magnesium dopant by Hall measurement. This carrier scattering of the results were similar to the Book-Herring-Dingle formula. And the diffusion length was smaller than the grain size from the XRD. This results were similar to the screening potential of the Thomas-Fermi. Therefore, the electron resistivity was related to the ionized impurity scattering of ZnMgO films grown by using diethylzinc solution.},
 pages = {103--106},
 title = {ジエチル亜鉛原料を用いて作製したZnMgO 膜の電気特性},
 volume = {47},
 year = {2018},
 yomi = {トミナガ, ヒメカ and ヨシノ, ケンジ and トミナガ, ヒメカ}
}