@article{oai:miyazaki-u.repo.nii.ac.jp:00005658,
 author = {和田, 季己 and Wada, Toshiki and 橋本, 英明 and Hashimoto, Hideaki and 横山, 祐貴 and Yokoyama, Yuki and Yokoyama, Yuuki and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 鈴木, 秀俊 and Suzuki, Hidetoshi and 和田, 季己 and Wada, Toshiki and 橋本, 英明 and Hashimoto, Hideaki and 横山, 祐貴 and Yokoyama, Yuki and Yokoyama, Yuuki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {We investigated the influence of annealing treatment of GaAsN thin film fabricated by atomic layer epitaxy (ALE) method using polarized Raman measurement. Raman spectrum was fited with LO, TO and disorder-activated TO (DATO) mode using Lorentzian function. Disorder on orientation of the crystal in the film was not improved by the annealing at 700℃ for 1 min. LO-phonon plasmon coupling (LOPC) mode appeared after the annealing due to increasing hole concentration. The full width at half maximum of the LO mode peak decreased because of improvement of the crystallinity. Polarized Raman measurements are effective for analysis of the crystallinity because they can quench the LOPC mode which depended on the carrier concentration.},
 pages = {91--94},
 title = {偏光ラマン測定によるGaAsN 薄膜の結晶性に及ぼすアニール処理の影響},
 volume = {47},
 year = {2018},
 yomi = {ワダ, トシキ and ハシモト, ヒデアキ and ヨコヤマ, ユウキ and マエダ, コウジ and スズキ, ヒデトシ and ワダ, トシキ and ハシモト, ヒデアキ and ヨコヤマ, ユウキ}
}