@article{oai:miyazaki-u.repo.nii.ac.jp:00005656,
 author = {井上, 裕貴 and Inoue, Yuki and 若城, 玲亮 and Wakaki, Ryosuke and 永濱, 龍也 and Nagahama, Tatsuya and 高橋, 翔 and Takahashi, Kakeru and Arai, Masakazu and 荒井, 昌和 and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 井上, 裕貴 and Inoue, Yuki and 若城, 玲亮 and Wakaki, Ryosuke and 永濱, 龍也 and Nagahama, Tatsuya and 高橋, 翔 and Takahashi, Kakeru},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {The lattice matched InAs/GaAsSb superlattices (SLs) with periodical layer thicknesses of 5-9 nm were fabricated on n-InAs substrates by metal organic vaper epitaxy (MOVPE) toward mid-infrared opto devices. The SLs had good lattice macthing to the substrate. These SLs were successfully demonstrated a photoluminescence peak centered at 3.3 to 5 μm depended on layer thickness. The emission wavelength could be controlled by the layer thickness of SLs. The SLs with clad layer emited in the mid-infrared region at room temperature.},
 pages = {83--86},
 title = {MOVPE 法で作製したInAs/GaAsSb 超格子の中赤外域の光学特性の周期厚依存性},
 volume = {47},
 year = {2018},
 yomi = {イノウエ, ユウキ and ワカキ, リョウスケ and ナガハマ, テツヤ and タカハシ, カケル and アライ, マサカズ and マエダ, コウジ and イノウエ, ユウキ and ワカキ, リョウスケ and ナガハマ, テツヤ and タカハシ, カケル}
}