{"created":"2023-05-15T10:00:48.150428+00:00","id":5213,"links":{},"metadata":{"_buckets":{"deposit":"023de6ff-8dbd-4454-a513-722f7f161325"},"_deposit":{"created_by":5,"id":"5213","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"5213"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00005213","sets":["73","73:36","73:36:330","73:36:330:327"]},"author_link":["14196","12047","27202","27205","28208"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"ゲンシソウエピタキシーホウ ニ ヨッテ サクセイ サレタ GaAsNヒマク ノ サクセイジョウケン ノ チガイ ガ ケッショウセイ ニ アタエル エイキョウ ノ ラマンブンコウホウ ニ ヨル ヒョウカ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-07-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"116","bibliographicPageStart":"113","bibliographicVolumeNumber":"46","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Effects of growth conditions in GaAsN films prepared by atomic layer epitaxy have been evaluated using Raman spectroscopy. The Raman spectrum ware fitted to the LO and TO modes using the Lorentz function. The crystallinity was evaluated from the full width at half maximum of LO peak and the area intensity ratio of LO and TO peak. Crystallinity deteriorated with increasing in the growth temperature. The crystallinity was improved as the results of increasing the film thickness and decreasing of the gas supply duration. The growth temperature at 480 °C had the best crystallinity in GaAsN films.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"橋本, 英明","creatorNameLang":"ja"},{"creatorName":"ハシモト, ヒデアキ","creatorNameLang":"ja-Kana"},{"creatorName":"Hashimoto, Hideaki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"和田, 季己","creatorNameLang":"ja"},{"creatorName":"ワダ, トシキ","creatorNameLang":"ja-Kana"},{"creatorName":"Wada, Toshiki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"横山, 祐貴","creatorNameLang":"ja"},{"creatorName":"ヨコヤマ, ユウキ","creatorNameLang":"ja-Kana"},{"creatorName":"Yokoyama, Yuki","creatorNameLang":"en"},{"creatorName":"Yokoyama, Yuuki","creatorNameLang":"en"}],"familyNames":[{},{},{},{}],"givenNames":[{},{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Maeda, Koji","creatorNameLang":"en"},{"creatorName":"前田, 幸治","creatorNameLang":"ja"},{"creatorName":"マエダ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"Maeda, Kouji","creatorNameLang":"en"}],"familyNames":[{},{},{},{}],"givenNames":[{},{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"鈴木, 秀俊","creatorNameLang":"ja"},{"creatorName":"スズキ, ヒデトシ","creatorNameLang":"ja-Kana"},{"creatorName":"Suzuki, Hidetoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"橋本, 英明","creatorNameLang":"ja"},{"creatorName":"ハシモト, ヒデアキ","creatorNameLang":"ja-Kana"},{"creatorName":"Hashimoto, Hideaki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"和田, 季己","creatorNameLang":"ja"},{"creatorName":"ワダ, トシキ","creatorNameLang":"ja-Kana"},{"creatorName":"Wada, Toshiki","creatorNameLang":"en"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"横山, 祐貴","creatorNameLang":"ja"},{"creatorName":"ヨコヤマ, ユウキ","creatorNameLang":"ja-Kana"},{"creatorName":"Yokoyama, Yuki","creatorNameLang":"en"},{"creatorName":"Yokoyama, Yuuki","creatorNameLang":"en"}],"familyNames":[{},{},{},{}],"givenNames":[{},{},{},{}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"p113.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/5213/files/p113.pdf"},"version_id":"3a4dd114-a8c1-4e58-ae10-d3ce9d1dca76"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ALE, Raman, GaAsN, Crystallinity","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"原子層エピタキシー法によって作製されたGaAsN薄膜の作製条件の違いが結晶性に与える影響のラマン分光法による評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"原子層エピタキシー法によって作製されたGaAsN薄膜の作製条件の違いが結晶性に与える影響のラマン分光法による評価","subitem_title_language":"ja"},{"subitem_title":"Effects in Growth Conditions on Crystallinity of GaAsN Films Grown by Atomic Layer Epitaxy using Raman Spectroscopy","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","327"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"5213","relation_version_is_last":true,"title":["原子層エピタキシー法によって作製されたGaAsN薄膜の作製条件の違いが結晶性に与える影響のラマン分光法による評価"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-11-08T05:56:11.224529+00:00"}