@article{oai:miyazaki-u.repo.nii.ac.jp:00005213,
 author = {橋本, 英明 and Hashimoto, Hideaki and 和田, 季己 and Wada, Toshiki and 横山, 祐貴 and Yokoyama, Yuki and Yokoyama, Yuuki and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 鈴木, 秀俊 and Suzuki, Hidetoshi and 橋本, 英明 and Hashimoto, Hideaki and 和田, 季己 and Wada, Toshiki and 横山, 祐貴 and Yokoyama, Yuki and Yokoyama, Yuuki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Effects of growth conditions in GaAsN films prepared by atomic layer epitaxy have been evaluated using Raman spectroscopy. The Raman spectrum ware fitted to the LO and TO modes using the Lorentz function. The crystallinity was evaluated from the full width at half maximum of LO peak and the area intensity ratio of LO and TO peak. Crystallinity deteriorated with increasing in the growth temperature. The crystallinity was improved as the results of increasing the film thickness and decreasing of the gas supply duration. The growth temperature at 480 °C had the best crystallinity in GaAsN films.},
 pages = {113--116},
 title = {原子層エピタキシー法によって作製されたGaAsN薄膜の作製条件の違いが結晶性に与える影響のラマン分光法による評価},
 volume = {46},
 year = {2017},
 yomi = {ハシモト, ヒデアキ and ワダ, トシキ and ヨコヤマ, ユウキ and マエダ, コウジ and スズキ, ヒデトシ and ハシモト, ヒデアキ and ワダ, トシキ and ヨコヤマ, ユウキ}
}