@article{oai:miyazaki-u.repo.nii.ac.jp:00005212,
 author = {仲川, 豪志 and Nakagawa, Goushi and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 鈴木, 秀俊 and Suzuki, Hidetoshi and 境, 健太郎 and Sakai, Kentaro and 仲川, 豪志 and Nakagawa, Goushi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {GaAs nanowires (NWs) were grown on Si (111) substrate by Au assisted pulsed–jet gas epitaxy. The shapes and luminescent properties of NWs were investigated by scanning electron microscope and photoluminescence. The diameter and length of NWs decreased with increasing growth temperature (Tg). NWs shape was tapering up to 550℃. The dispersion of the growth angle of NWs decreased with the increasing in Tg. The emission from the NWs grown at 530～550℃ was detected at room temperature. While that from grown at 480℃ and 500℃could not be detected. The luminescence from free exciton in NWs could be observed in NWs grown at Tg 530 ℃, and the crystallinity of the NWs was the best. These results were seemed due to increase of impurities or As desorption.},
 pages = {109--112},
 title = {原料ガス断続供給法を用いて異なる成長温度で作製した GaAs ナノワイヤの発光特性},
 volume = {46},
 year = {2017},
 yomi = {ナカガワ, ゴウシ and マエダ, コウジ and スズキ, ヒデトシ and サカイ, ケンタロウ and ナカガワ, ゴウシ}
}