@article{oai:miyazaki-u.repo.nii.ac.jp:00005030,
 author = {徳田, 直樹 and 立神, 秀弥 and Tategami, Shuya and 李, 垚 and Ikari, Tetsuo and 碇, 哲雄 and 西岡, 賢祐 and Fukuyama, Atsuhiko and 福山, 敦彦 and Tokuda, Naoki and 立神, 秀弥 and Tategami, Shuya and Li, Yao and Nishioka, Kensuke},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {We have carried out the Hall measurement of Si wafer to investigate the dominant scattering mechanism when the concentrator irradiation condition. From the Hall measurements with keeping the sample temperature constant, measured mobility decreased with increasing the sunlight concentration up to 3.0 SUN. It was also found that the ratio of mobility decrease for p-type Si was larger than that for n-type Si. Since the decrease factor is considered to be photo-generated carriers, we calculated the photo-generated carrier concentration assuming both electron and hole exist. We could concluded that decrease of mobility by the concentrator irradiation are due to not the phonon scattering with increasing sample temperature but the increase of both electron and hole concentrations.},
 pages = {111--113},
 title = {擬似太陽光照射による単結晶 Siのキャリア移動度の変化と太陽電池特性への影響},
 volume = {45},
 year = {2017},
 yomi = {トクダ, ナオキ and タテガミ, シュウヤ and リ, ヤオ and イカリ, テツオ and ニシオカ, ケンスケ and フクヤマ, アツヒコ and タテガミ, シュウヤ}
}