@article{oai:miyazaki-u.repo.nii.ac.jp:00005029,
 author = {杉原, 圭二 and 中野, 真理菜 and 岩元, 杏里 and Iwamoto, Anri and 大堀, 大介 and Ohori, Daisuke and 本田, 善央 and Honda, Yoshio and 天野, 浩 and Amano, Hiroshi and Ikari, Tetsuo and 碇, 哲雄 and Fukuyama, Atsuhiko and 福山, 敦彦 and Sugihara, Keiji and Nakano, Marina and 岩元, 杏里 and Iwamoto, Anri and 大堀, 大介 and Ohori, Daisuke and 本田, 善央 and Honda, Yoshio and 天野, 浩 and Amano, Hiroshi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {We investigated the radiative recombination properties of semi-polar (11̅01)GaN films grown on patterned (001)Si substrate by using photoreflectance (PR) and photoluminescence (PL) spectroscopies. The X-ray diffraction (XRD) method was also used for investigating strain content. Estimated bandgap energy (Eg) by Kramers-Kronig transformation of PR spectrum showed about 35 meV lower energy side than that of polar (0001)GaN. It was found that the strain of growth direction (=[111]Si) did not exist from the XRD 2- scan. Therefore, reduction of Eg may be caused by the tensile strain along the [11̅0]Si or [112̅-]Si direction. From the low temperature PL and PR measurements, we could confirm the several radiative peaks caused by donor-bound exciton, acceptor-bound exciton, and donor-to-acceptor pair recombination.},
 pages = {105--109},
 title = {フォトルミネッセンス法による加工 Si 基板上半極性 (1-101) 面 GaN薄膜の発光再結合特性評価},
 volume = {45},
 year = {2016},
 yomi = {スギハラ, ケイジ and ナカノ, マリナ and イワモト, アンリ and オオホリ, ダイスケ and ホンダ, ヨシオ and アマノ, ヒロシ and イカリ, テツオ and フクヤマ, アツヒコ and イワモト, アンリ and オオホリ, ダイスケ and ホンダ, ヨシオ and アマノ, ヒロシ}
}