@article{oai:miyazaki-u.repo.nii.ac.jp:00005029.1,
 author = {杉原, 圭二 and 中野, 真理菜 and 岩元, 杏里 and 大堀, 大介 and 本田, 善央 and 天野, 浩 and 碇, 哲雄 and Ikari, Tetsuo and 福山, 敦彦 and Fukuyama, Atsuhiko and Sugihara, Keiji and Nakano, Marina and Iwamoto, Anri and Ohori, Daisuke and Honda, Yoshio and Amano, Hiroshi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {We investigated the radiative recombination properties of semi-polar (11̅01)GaN films grown on patterned (001)Si substrate by using photoreflectance (PR) and photoluminescence (PL) spectroscopies. The X-ray diffraction (XRD) method was also used for investigating strain content. Estimated bandgap energy (Eg) by Kramers-Kronig transformation of PR spectrum showed about 35 meV lower energy side than that of polar (0001)GaN. It was found that the strain of growth direction (=[111]Si) did not exist from the XRD 2- scan. Therefore, reduction of Eg may be caused by the tensile strain along the [11̅0]Si or [112̅-]Si direction. From the low temperature PL and PR measurements, we could confirm the several radiative peaks caused by donor-bound exciton, acceptor-bound exciton, and donor-to-acceptor pair recombination.},
 pages = {105--109},
 title = {フォトルミネッセンス法による加工 Si 基板上半極性 (1-101) 面 GaN薄膜の発光再結合特性評価},
 volume = {45},
 year = {2016},
 yomi = {スギハラ, ケイジ and ナカノ, マリナ and イワモト, アンリ and オオホリ, ダイスケ and ホンダ, ヨシオ and アマノ, ヒロシ and イカリ, テツオ and フクヤマ, アツヒコ}
}