@article{oai:miyazaki-u.repo.nii.ac.jp:00005025,
 author = {橋本, 英明 and Hashimoto, Hideaki and 山本, 大貴 and 吉留, 寛貴 and 横山, 祐貴 and Yokoyama, Yuki and Yokoyama, Yuuki and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 鈴木, 秀俊 and Suzuki, Hidetoshi and 橋本, 英明 and Hashimoto, Hideaki and Yamamoto, Hiroki and Yoshidome, Hiroki and 横山, 祐貴 and Yokoyama, Yuki and Yokoyama, Yuuki},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Raman measurements was performed using two different wavelengths lasers for three different kinds of thickness GaAsN / GaAs thin film. We have compared two methods of fitting. One was fitted with TO and LO peak of sample and another was fitted with 3 peaks, TO, LO and the substrate GaAs LO peak. It was found that the signal from the substrate was superimposed on the signal from the upper layer. In the care of thin film Raman measurement, it is necessary either using the excitation light having the shorter penetration depth than the film thickness or analyzing process to eliminate the influence of the substrate.},
 pages = {87--89},
 title = {ラマン分光法における励起光の侵入長を考慮した薄膜の評価方法},
 volume = {45},
 year = {2016},
 yomi = {ハシモト, ヒデアキ and ヤマモト, ヒロキ and ヨシドメ, ヒロキ and ヨコヤマ, ユウキ and マエダ, コウジ and スズキ, ヒデトシ and ハシモト, ヒデアキ and ヨコヤマ, ユウキ}
}