@article{oai:miyazaki-u.repo.nii.ac.jp:00005022,
 author = {上村, 健二 and 仲川, 豪志 and Nakagawa, Goushi and Maeda, Koji and 前田, 幸治 and Maeda, Kouji and 鈴木, 秀俊 and Suzuki, Hidetoshi and 境, 健太郎 and Maeda, Kouji and Sakai, Kentaro and Kamimura, Kenji and 仲川, 豪志 and Nakagawa, Goushi},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {GaAs nanowires (NWs) assisted Au catalyst on the Si (111) substrate have been synthesized by employing the pulsed-jet epitaxy method. The effect of growth conditions was evaluated by changing the formation and the growth direction of the NWs. Increasing the Au droplet diameter, the number density of NWs reduced and the length of NWs became longer. In the higher growth temperature, the distribution of the growth direction on the nanowire axis was small, and the NWs grow to perpendicular direction to a substrate. However, the desorption of As restrain the growth of NWs more than 550 ℃.},
 pages = {75--77},
 title = {原料ガス断続供給法による Au を触媒とした GaAsナノワイヤの作製},
 volume = {45},
 year = {2016},
 yomi = {ナカガワ, ゴウシ and マエダ, コウジ and スズキ, ヒデトシ and サカイ, ケンタロウ and ナカガワ, ゴウシ}
}