{"created":"2023-05-15T10:00:24.181039+00:00","id":4717,"links":{},"metadata":{"_buckets":{"deposit":"b848b688-f694-47ca-a8c3-7f3c3e31b2e4"},"_deposit":{"created_by":9,"id":"4717","owner":"5","owners":[9],"pid":{"revision_id":0,"type":"depid","value":"4717"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00004717","sets":["73","73:36","73:36:330","73:36:330:325"]},"author_link":["12634","25565","12047","25574","14196","25571","25564","25568"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"InGaAs/GaAs(001) カイメン ニ オケル セイチョウ ショキ カテイ ノ テンイ ノ Xセン カイセツ オヨビ トポグラフホウ オ モチイタ カンサツ"}]},"item_10002_biblio_info_7":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-07-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"75","bibliographicPageStart":"71","bibliographicVolumeNumber":"44","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Reciprocal space mapping (RSM) and X-ray topography (XRT) were performed to understand the anisotropies of misfit dislocations (MDs) formed in the initial growth stage of InGaAs on GaAs(001). The MDs densities increased with increasing both In composition and the film thickness, and it highly depended on the film thickness rather than the In composition. Anisotropies in MDs distribution observed by XRT were good agreement with those observed by RSM. In addition, the 15% of Burgers vectors for all MDs could be identified by XRT.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of 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