{"created":"2023-05-15T10:00:23.386296+00:00","id":4705,"links":{},"metadata":{"_buckets":{"deposit":"245a74dd-9808-49a0-99d2-f93f11d07c3c"},"_deposit":{"created_by":5,"id":"4705","owner":"5","owners":[5],"pid":{"revision_id":0,"type":"depid","value":"4705"},"status":"published"},"_oai":{"id":"oai:miyazaki-u.repo.nii.ac.jp:00004705","sets":["73","73:36","73:36:330","73:36:330:325"]},"author_link":["25473","25472","25468","25467","7289","14196","7290"],"item_10002_alternative_title_1":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"バショ センタク カコウ シタ Si キバン オ モチイタ GaAs-NWs ノ セイチョウ"}]},"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-07-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"8","bibliographicPageStart":"5","bibliographicVolumeNumber":"44","bibliographic_titles":[{"bibliographic_title":"宮崎大学工学部紀要","bibliographic_titleLang":"ja"},{"bibliographic_title":"Memoirs of Faculty of Engineering, University of Miyazaki","bibliographic_titleLang":"en"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Catalyst-free GaAs-nanowire (GaAs-NWs) have been studied . But, It doesn't achieve to growth GaAs-NWs on Si(001) substrate looking toward the opto-electronic integrated circuit (OEIC) and Micro Electro Mechanical systems (MEMS). So we attempted to make site selective growth of GaAs-NWs by using patterned Si substrate and investigated the flux condition of maximum GaAs-NWs density. We found that it is possible to selective growth of GaAs-NWs by patterned Si substrate and GaAs-NWs or GaAs layer morphology depend on Ga flux. For detail, Ga flux and As flux are less than 0.25 [ML/s] and 1.0 [ML/s] for maximum GaAs-NWs density. Additionally, we concluded relation between Ga flux and Ga droplet have an effect on relation between Ga flux and GaAs-NWs density.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宮崎大学工学部","subitem_publisher_language":"ja"},{"subitem_publisher":"Faculty of Engineering, University of Miyazaki","subitem_publisher_language":"en"}]},"item_10002_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00732558","subitem_source_identifier_type":"NCID"}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"05404924","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"原田, 一徹","creatorNameLang":"ja"},{"creatorName":"ハラダ, イッテツ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"河瀬, 平雅","creatorNameLang":"ja"},{"creatorName":"カワセ, タイガ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鈴木, 秀俊","creatorNameLang":"ja"},{"creatorName":"スズキ, ヒデトシ","creatorNameLang":"ja-Kana"},{"creatorName":"Suzuki, Hidetoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Fukuyama, Atsuhiko","creatorNameLang":"en"},{"creatorName":"福山, 敦彦","creatorNameLang":"ja"},{"creatorName":"フクヤマ, アツヒコ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Ikari, Tetsuo","creatorNameLang":"en"},{"creatorName":"碇, 哲雄","creatorNameLang":"ja"},{"creatorName":"イカリ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Harada, Ittetsu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawase, Taiga","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-06-21"}],"displaytype":"detail","filename":"engineering44_5-8.pdf","filesize":[{"value":"754.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文","url":"https://miyazaki-u.repo.nii.ac.jp/record/4705/files/engineering44_5-8.pdf"},"version_id":"98048250-6578-4ad5-bb76-7ecbaf8d891f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaAs, Nanowires, Si, MBE, VLS","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"場所選択加工したSi 基板を用いたGaAs-NWs の成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"場所選択加工したSi 基板を用いたGaAs-NWs の成長","subitem_title_language":"ja"},{"subitem_title":"Site Selective Growth of GaAs-NWs on Patterned Si Substrate","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"5","path":["73","36","330","325"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-21"},"publish_date":"2020-06-21","publish_status":"0","recid":"4705","relation_version_is_last":true,"title":["場所選択加工したSi 基板を用いたGaAs-NWs の成長"],"weko_creator_id":"5","weko_shared_id":2},"updated":"2023-09-02T13:32:08.311999+00:00"}