@article{oai:miyazaki-u.repo.nii.ac.jp:00004705,
 author = {原田, 一徹 and 河瀬, 平雅 and 鈴木, 秀俊 and Suzuki, Hidetoshi and Fukuyama, Atsuhiko and 福山, 敦彦 and Ikari, Tetsuo and 碇, 哲雄 and Harada, Ittetsu and Kawase, Taiga},
 journal = {宮崎大学工学部紀要, Memoirs of Faculty of Engineering, University of Miyazaki},
 month = {Jul},
 note = {Catalyst-free GaAs-nanowire (GaAs-NWs) have been studied . But, It doesn't achieve to growth GaAs-NWs on Si(001) substrate looking toward the opto-electronic integrated circuit (OEIC) and Micro Electro Mechanical systems (MEMS). So we attempted to make site selective growth of GaAs-NWs by using patterned Si substrate and investigated the flux condition of maximum GaAs-NWs density. We found that it is possible to selective growth of GaAs-NWs by patterned Si substrate and GaAs-NWs or GaAs layer morphology depend on Ga flux. For detail, Ga flux and As flux are less than 0.25 [ML/s] and 1.0 [ML/s] for maximum GaAs-NWs density. Additionally, we concluded relation between Ga flux and Ga droplet have an effect on relation between Ga flux and GaAs-NWs density.},
 pages = {5--8},
 title = {場所選択加工したSi 基板を用いたGaAs-NWs の成長},
 volume = {44},
 year = {2015},
 yomi = {ハラダ, イッテツ and カワセ, タイガ and スズキ, ヒデトシ and フクヤマ, アツヒコ and イカリ, テツオ}
}